This article reports a multi-gain-stage avalanche photodiode based on InGaAs/InAlAs superlattice, which has much higher gain and signal-to-noise ratio than conventional APD. The physical mechanism of high gain and low noise of this type of APD is analyzed in detail, and the dead space gain theory (DSMT) is introduced and applied to the calculation of the excess noise factor of multi-gain-stage APD. For a 5-stage device, the distribution of electric field and carrier dead space is calculated, and the ionization rates before and after considering phonon scattering are compared. The gain vs excess noise factor curve is obtained and compared with the traditional McIntyre model. The simulation results shows that the excess noise factor is equivalent to the McIntyre model k=0.049. Based on the simulation results, an optimized epitaxial material structure is designed, Front-illuminated photo diode were etched in the molecular beam epitaxy (MBE)-grown epitaxial material, the mesa sidewalls were encapsulated with Si3N4 . The test results of a 50μm diameter device are as follows: maximum above 1000, excess noise factor of 2.39@M=100, spectral response range of 0.95~1.65μm, response time of 1.26ns.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.