Dr. Gary Jiang Profile

Dr. Gary Jiang

Senior Technologist at Onto Innovation Inc

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Author

Publications (4)

Proceedings Article | 16 April 2008 Paper

Characterization of sub-50-nm line array structures with angle-resolved multiple wavelength scatterometry

Michael Kotelyanskii, Fei Shen, Gary Jiang, Benjamin Bunday

Proceedings Volume 6922, 69223N (2008) https://doi.org/10.1117/12.772580

KEYWORDS: Semiconducting wafers, Amorphous silicon, Data modeling, Finite element methods, Scatterometry, Critical dimension metrology, Refractive index, Metrology, Precision measurement, Statistical modeling

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Proceedings Article | 16 April 2008 Paper

Sensitivity and performance estimates for the multiple wavelength multiple incidence angle ellipsometry for OCD applications

Michael Kotelyanskii, Gary Jiang

Proceedings Volume 6922, 69223O (2008) https://doi.org/10.1117/12.772682

KEYWORDS: Amorphous silicon, Photoresist materials, Silicon, Ellipsometry, Deep ultraviolet, Oxides, Metrology, Statistical analysis, Optical metrology, Spectroscopy

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Proceedings Article | 25 March 2008 Paper

Characterization of the poly gate ACI structure with laser based angle resolved multiple wavelength scatterometry

Gary Jiang, Michael Kotelyanskii, Fei Shen

Proceedings Volume 6922, 69223Q (2008) https://doi.org/10.1117/12.772615

KEYWORDS: Dysprosium, Transmission electron microscopy, Semiconducting wafers, Laser scattering, Scatterometry, Metrology, Process control, Critical dimension metrology, Optical metrology, Reflectance spectroscopy

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Proceedings Article | 24 May 2004 Paper

Characterizing SiOx Ny ARC materials with laser ellipsometry and DUV reflectometry

Gary Jiang, Timothy Sun, Donald Pelcher, Jana Clerico, Jui-Ping Li, Yi-Ru Chen

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535264

KEYWORDS: Etching, Metrology, Reflectivity, Deep ultraviolet, Reflectometry, Transmission electron microscopy, Semiconducting wafers, Ellipsometry, Process control, Silicon

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