KEYWORDS: Image classification, Library classification systems, Databases, Logic, Metals, Standards development, Front end of line, Back end of line, Design for manufacturing
As technology advances, chip size becomes larger and larger, this brings challenges when engineers would like to do a quick investigation of the design in a short time, like hotspot detection and layout fixing. An idea to mitigate the challenges is to decompose a layout into patterns and classify these patterns to unique ones. Engineers then prioritize their work on these unique patterns. Patterns from different products can be accumulated and recorded, when a new design comes in, the known patterns will be filtered out from all unique patterns seen in this new design. When the pattern database is large enough and contains enough safe and weak patterns, machine learning can be used to train the algorithm to predict hotspots in the new design. The key point is how to efficiently decompose a layout and group those patterns. This paper presents how to decompose a layout by using Calibre Pattern Matching and DRC. The experiment data shows that this is a very efficient way to decompose a layout automatically.
A design usually goes through several versions until achieving a most successful one. These changes between versions are not a complete substitution but a continual improvement, either fixing the known issues of its prior versions (engineering change order) or a more optimized design substitution of a portion of the design. On the manufacturing side, process engineers care more about the design pattern changes because any new pattern occurrence may be a killer of the yield. An effective and efficient way to narrow down the diagnosis scope appeals to the engineers. What is the best approach of comparing two layouts? A direct overlay of two layouts may not always work as even though most of the design instances will be kept in the layout from version to version, the actual placements may be different. An alternative way, pattern based layout comparison, comes to play. By expanding this application, it makes it possible to transfer the learning in one cycle to another and accelerate the process of failure analysis.
This paper presents a solution to compare two layouts by using Calibre DRC and Pattern Matching. The key step in this flow is layout decomposition. In theory, with a fixed pattern size, a layout can always be decomposed into limited number of patterns by moving the pattern center around the layout, the number is limited but may be huge if the layout is not processed smartly! A mathematical answer is not what we are looking for but an engineering solution is more desired. Layouts must be decomposed into patterns with physical meaning in a smart way. When a layout is decomposed and patterns are classified, a pattern library with unique patterns inside is created for that layout. After individual pattern libraries for each layout are created, run pattern comparison utility provided by Calibre Pattern Matching to compare the pattern libraries, unique patterns will come out for each layout. This paper illustrates this flow in details and demonstrates the advantage of combining Calibre DRC and Calibre Pattern Matching.
Memory is a critical component in today's system-on-chip (SoC) designs. Static random-access memory (SRAM) blocks are assembled by combining intellectual property (IP) blocks that come from SRAM libraries developed and certified by the foundries for both functionality and a specific process node. Customers place these SRAM IP in their designs, adjusting as necessary to achieve DRC-clean results. However, any changes a customer makes to these SRAM IP during implementation, whether intentionally or in error, can impact yield and functionality. Physical verification of SRAM has always been a challenge, because these blocks usually contain smaller feature sizes and spacing constraints compared to traditional logic or other layout structures. At advanced nodes, critical dimension becomes smaller and smaller, until there is almost no opportunity to use optical proximity correction (OPC) and lithography to adjust the manufacturing process to mitigate the effects of any changes. The smaller process geometries, reduced supply voltages, increasing process variation, and manufacturing uncertainty mean accurate SRAM physical verification results are not only reaching new levels of difficulty, but also new levels of criticality for design success. In this paper, we explore the use of pattern matching to create an SRAM verification flow that provides both accurate, comprehensive coverage of the required checks and visual output to enable faster, more accurate error debugging. Our results indicate that pattern matching can enable foundries to improve SRAM manufacturing yield, while allowing designers to benefit from SRAM verification kits that can shorten the time to market.
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