The GePb alloys are formed by implanting of Pb into Ge with a Pb dose of 2×1015 cm-2 and 6×1015cm-2 , following with rapid thermal annealing at the temperature of 500°C and 600°C under N2 atmosphere. The root-mean-square roughness of the GePb sample with the implantation dose of 6×1015cm-2 annealed at 600°C is measured to be 1.10 nm characterized by using atomic force microscope in the 5μm×5um scan area, which is the smallest value among reported results. It can be observed from the TEM measurent results that the GePb thickness of the samples with the implantation dose of 2×1015cm-2 and 6×1015cm-2 are approximately 20 nm and 30 nm, respectively. Pb composition of these samples decrease with the increasing of the annealing temperature due to the full precipitation of Pb out of Ge in the film. Temperature-dependent Hall measurement shows that a high Hall mobility of around 230-260 cm2 /Vs has been achieved at the measurement temperature of 80K and this value drops to about 110 cm2 /Vs at 300K. However, these values are both higher than that of traditional Ge sample. These results indicates that GePb alloys is a promising high mobility channel material for the future integrated optoelectronic circuit application.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.