KEYWORDS: Cameras, Charge-coupled devices, Digital imaging, Digital cameras, CCD cameras, Manufacturing, Spatial resolution, Image processing, Electronics, Control systems
The paper presents the description of the brand-new digital EBCCD (electron-bombarded CCD) camera based upon the 1024 X 512--format frame-transfer EBCCD image tube. The camera is intended for the low-light-level high-resolution imaging in pseudo real-time scale. The details of the digital camera design and manufacturing technology are presented and possible fields of the cameras applications as well as the next steps in the EBCCD tubes and high-sensitive cameras R&D mainstream are discussed.
The results of more than 10 years experience in design and manufacturing of thinned back-side illuminated CCDs of different types are summed up. Based upon the EB CCDs created, the family of intensified electron-bombarded CCD image tubes has been designed, fabricated and tested. This family includes: the single-stage Gen I type EB CCD devices with the 532*580 and 780*580 pixels CCDs; the `hybrid' (the EB CCD tube plus GenyI image intensifier) devices; and the EB CCD tubes with the 40 mm photocathode and image demagnification factor 3:1. The results of tests of these devices are presented and discussed. Besides, the near future projects concerning EB CCD tubes with the 80 mm photocathode and with image demagnification factor 5:1, and EB CCD tubes with solar blind photocathodes for the UV and EUV applications are briefly described.
This paper sums up the results of more than 10 years experience in design and manufacturing of thinned backside illuminated CCDs of different types. Based upon the EB-CCDs created, the family of intensified electron-bombarded CCD image tubes has been designed, fabricated and tested. This family includes: the single-stage Gen I-type EB-CCD devices with the 532*580 and 780*580 pixels CCDs; the `hybrid' (the EB-CCD tube plus Gen I image intensifier) devices; and the EB-CCD tubes with the 40 mm photocathode and image demagnification factor 3:1. The results of tests of these devices are presented and discussed. Besides, the near future projects concerning EB-CCD tubes with the 80 mm photocathode and with image demagnification factor 5:1, and EB-CCD tubes with solar blind photocathodes for the UV and EUV applications are briefly described.
Sergei Golovkin, Andrei Medvedkov, Ilia Dalinenko, Vladimir Kossov, Leonid Lazovsky, Alexandre Malyarov, Grigory Vishnevsky, Annette Frenkel, Giuseppe Martellotti, Gianni Penso, Vladimir Fedorov, Nina Kalashnikova, Jean-Paul Fabre, Eugene Kozarenko, Igor Kreslo
A hybrid image intensifier zoon tube, based on a thinned backside electron-bombarded CCD (EBCCD) 1024 X 1024 pixels (13.1 X 13.1 micrometers 2), to be used for the readout of a high resolution fiber detector in a high energy physics experiment, has been designed, manufactured and tested. This tube has a photocathode diameter of 40 mm and allows to change the image magnification (M) from 0.6 to 1.3. Owing to the low energy threshold of the EBCCD (2.5 keV) and the high operational voltage (15 kV), a gain (electrons per photoelectron) of 4000 has been attained. A spatial resolution of about 40 lp/mm (15% MTF) with an illumination of 2 (DOT) 10(superscript -4 lux and has been achieved. The EBCCD tube is gateable by applying appropriate voltage pulses to the focusing electrode. The high gain and the excellent space resolution of this device make it very interesting for many applications in high energy physics, astrophysics, medical diagnostics and very low light imaging.
This paper sums up the results of more than 10 years of experience in design and manufacturing of thinned back-side illuminated CCDs of different types. Based upon the EB- CCDs created, the family of intensified electron-bombardment CCD image tubes has been designed, fabricated, and tested. This family includes: the single-stage Gen I EB-CCD devices with the 532*580 and 780*580 pixels CCDs; the 'hybrid' (the EB-CCD tube plus Gen I image intensifier) devices; and the EB-CCD tubes with the 40 mm photocathode and image demagnification factor 3 to 1. The results of the tests of these devices are presented and discussed. Besides this, the near future projects concerning EB-CCD tubes with the 80 mm photocathode and with image demagnification factor 5 to 1, and EB-CCD tubes with solar blind photocathods for the UV and EUV applications are briefly described.
Gennadii Bryukhnevich, Ilia Dalinenko, K. Ivanov, S. Kaidalov, G. Kuz'min, Alexandre Malyarov, B. Moskalev, Sergei Naumov, E. Pischelin, Valdis Postovalov, Alexander Prokhorov, Mikhail Schelev, Alexander Smirnov, N. Soldatov
A number of time analyzing image converter tubes integrated with thinned, backside- illuminated, electron-bombarded (EB) CCDs were developed. Among them are PV001, PV003, and PIF01 streak tubes, differing from each other by their internal electron optics and external (metal-glass or metal-glass-ceramic) geometry. All tested EB CCD/streak tubes reveal relatively good behavior due to the long-term stability of their input S1 photocathode and reproducibility of the matrix parameters. These tubes differ advantageously from their regular type phosphor screen analogs by their rather high spatial resolution (40 lp/mm at 10 MTF for PV type tubes and 25 lp/mm at 10 MTF for PIF type tubes), reasonably good threshold sensitivity of 10-10 J/cm2 in standard, 10 MHz CCD scanning mode at 850 nm input radiation, and picosecond temporal resolution (better than 5 ps) at a relatively acceptable value of the light transfer function (approximately 102).
Gennadii Bryukhnevich, Ilia Dalinenko, K. Ivanov, S. Kaidalov, G. Kuz'min, B. Moskalev, Sergei Naumov, E. Pischelin, Valdis Postovalov, Alexander Prokhorov, Mikhail Schelev
A luminescence screen was replaced with a thinned, backside-illuminated, electron bombarded (EB) CCD in a well-known PV 001 streak/shutter image converter tube. The tube was mounted into an experimental camera prototype for measurement of its main technical characteristics. Under EB CCD readout operation in a free-scanning, slow-speed mode, the overall system spatial resolution was higher than 40 lp/mm at 10% MTF, and the linear part of the light transfer function was not less than 130. In streak mode the PV 001/EB CCD image tube exhibited threshold sensitivity of not less than 10-10 J/cm2 when recording 40 ps, 850 nm radiation pulses from a semiconductor laser. The preliminary results indicate that the PV 001/EB CCD image tube has quite a stable infrared sensitivity of its S1 photocathode.
It is well known that thinned backside-illuminated CCD image sensors are very efficient for electron beam imaging. The authors have adapted an electron-bombarded (EB) CCD for application in UV and VUV spectral regions. This adaptation includes the creation of a shallow accumulation layer near the device backside surface either by ion implantation and annealing or by a certain chemical treatment of the surface. Preliminary experimental results confirm the applicability of the developed procedure in achieving a reasonable quantum efficiency. Some problems associated with the UV and VUV imagers design and fabrication are discussed.
Gennadii Bryukhnevich, Ilia Dalinenko, G. Kuz'min, B. Libenson, Alexandre Malyarov, B. Moskalev, Valdis Postovalov, Alexander Prokhorov, Mikhail Schelev
Possibilities of EB CCD sensors application for electron-optical picosecond
recording systems have been investigated. Some requirements for the EB CCD
fabrication procedure were theoretically established and experimentally confirmed. EB
CCD sensors were inserted either into the first generation image intensifiers coupled
through fibre optics plate to the output of the temporal analysing tube or directly
instead of the phosphor screen of this analyser. In the second case the system
spatial resolution is slightly better while the sensitivity for both systems is
almost the same.
Ilia Dalinenko, Yu Zvegintsev, K. Ivanov, G. Kuz'min, Valerij Lozovoi, Alexandre Malyarov, Sergei Naumov, E. Pischelin, Valdis Postovalov, Alexander Prokhorov, D. Sornakov, Mikhail Schelev
In the optical channel of picosecond recording system a set of cross-over image
tubes and microchannel intensifiers were used together with either light sensitive
cooled CCD-image sensor (520. JC pixels) or electron-bombarded CCD installed inside
cross-over type image tube, or SIT-vidicon sensor. 4.5±0.5 Ps light pulses from YA1O3
:Nd laser at l.O8jum wavelength, and 2 Ps light pulses from AlGaAs/GaAs semiconductor
laser at 850 nm wavelength were employed for comparative measurements of the
recording system. It is shown that the electron-bombarded CCD matrix placed inside
cross-over type image tube and matched through fibre optics window directly to
pv-oo1 temporal-analysing image converter tube, provides the overall system spatial
resolution of 25 line pairs/mm at 30% MTF, dynamic range of not less than 50 and
input photocathode sensitivity about 2E-1O J/cm**2.
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