Mr. Jason P. Minter Profile

Jason P. Minter

Director, IC Technology at SYS Technologies

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Publications (5)

Proceedings Article | 11 June 1999 Paper

Evaluation of electron beam stabilization for ion implant processing

Stephen Buffat, Bee Kickel, B. Philipps, J. Adams, Matthew Ross, Jason Minter, Trey Marlowe, Selmer Wong

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350167

KEYWORDS: Semiconducting wafers, Photoresist materials, Electron beams, Deep ultraviolet, Ions, Photoresist processing, Scanning electron microscopy, Silicon, Oxides, Photomasks

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Proceedings Article | 11 June 1999 Paper

Low-temperature technique for thick film resist stabilization and curing

Jason Minter, Selmer Wong, Trey Marlowe, Matthew Ross, Mark Narcy, William Livesay

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350163

KEYWORDS: Electron beams, Photoresist processing, Photoresist materials, Statistical analysis, FT-IR spectroscopy, Chemical analysis, Scanning electron microscopy, Picture Archiving and Communication System, Refraction, Thin films

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Proceedings Article | 11 June 1999 Paper

Advanced metal lift-off process using electron-beam flood exposure of single-layer photoresist

Jason Minter, Matthew Ross, William Livesay, Selmer Wong, Mark Narcy, Trey Marlowe

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350158

KEYWORDS: Photoresist materials, Electron beams, Floods, Metals, Photoresist developing, Plasma etching, Image processing, Picture Archiving and Communication System, Semiconducting wafers, Photoresist processing

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Proceedings Article | 11 June 1999 Paper

Evaluation of stabilization techniques for ion implant processing

Matthew Ross, Selmer Wong, Jason Minter, Trey Marlowe, Mark Narcy, William Livesay

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350165

KEYWORDS: Ions, Electron beams, Photoresist processing, Photoresist materials, Semiconducting wafers, Scanning electron microscopy, Critical dimension metrology, Picture Archiving and Communication System, FT-IR spectroscopy, Photography

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With the integration of high current ion implant processing into volume CMOS manufacturing, the need for photoresist stabilization to achieve a stable ion implant process is critical. This study compares electron beam stabilization, a non-thermal process, with more traditional thermal stabilization techniques such as hot plate baking and vacuum oven processing. The electron beam processing is carried out in a flood exposure system with no active heating of the wafer. These stabilization techniques are applied to typical ion implant processes that might be found in a CMOS production process flow. The stabilization processes are applied to a 1.1 micrometers thick PFI-38A i-line photoresist film prior to ion implant processing. Post stabilization CD variation is detailed with respect to wall slope and feature integrity. SEM photographs detail the effects of the stabilization technique on photoresist features. The thermal stability of the photoresist is shown for different levels of stabilization and post stabilization thermal cycling. Thermal flow stability of the photoresist is detailed via SEM photographs. A significant improvement in thermal stability is achieved with the electron beam process, such that photoresist features are stable to temperatures in excess of 200 degrees C. Ion implant processing parameters are evaluated and compared for the different stabilization methods. Ion implant system end-station chamber pressure is detailed as a function of ion implant process and stabilization condition. The ion implant process conditions are detailed for varying factors such as ion current, energy, and total dose. A reduction in the ion implant systems end-station chamber pressure is achieved with the electron beam stabilization process over the other techniques considered. This reduction in end-station chamber pressure is shown to provide a reduction in total process time for a given ion implant dose. Improvements in the ion implant process are detailed across several combinations of current and energy.

Proceedings Article | 11 June 1999 Paper

Comparative study of resist stabilization techniques for metal etch processing

Gerry Becker, Matthew Ross, Selmer Wong, Jason Minter, Trey Marlowe, William Livesay

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350164

KEYWORDS: Etching, Metals, Photoresist processing, Electron beams, Scanning electron microscopy, Plasma systems, Ultraviolet radiation, Photoresist materials, Plasma, Photography

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