With this work we seek to cover a key space in the study of new materials for IR plasmonics: their integration on functional substrates. We show that Cd(Zn)O, a promising semiconductor oxide characterized by its low losses, can be grown in a polycrystalline form on a GaAs substrate. Despite this polycrystallinity, its plasmonic response can be described based on the physics of a homogeneous thin layer. With this study, we validate Cd(Zn)O for future integrated plasmonic systems on GaAsbased photonic devices.
We show here that Cd(Zn)O can be deposited on GaAs by MOCVD forming nanoparticles with a hemispherical shape. These nanoparticles maintain the key characteristics from a CdO film: very high plasma frequency and very low losses, hence retaining the strong plasmonic character. As a result of this, when illuminated with infrared light, two localized surface plasmon (LSP) modes are excited at 2.7 and 5.3 microns, and the electric field is heavily amplified in the underlying GaAs substrate. Moreover, their hemispherical geometry allows them to partially change the orientation of the field, creating a component perpendicular to the surface. We prove the coupling between the CdO LSPs and the intersubband transitions from a multiple QW structure, where the absorption is largely enhanced for p-polarized electric fields, and it is observed even under normal incidence conditions.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.