We report here an optically pumped deep UV edge emitting laser with AlGaN MQWs active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21- period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV Excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is predominantly TE polarized with a polarization suppression ratio of 24 dB. The side mode suppression ration (SMSR) is measured to be around 14 dB at 465 kW/cm2.
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