A Welding/Cutting laser system that uses Wavelength Beam Combining (WBC) technology for semiconductor blue lasers, the specifications for are 445 (nm) regions in wavelength, 400 (W) in output power with a fiber diameter of ≤50 (μm) and 2.0 (mm*mrad) (typical) in beam parameter product has developed. It is also possible to combine multiple of these to increase the power to a multi-kW level. Using this laser light source, we tried a laser annealing experiment on a sputtered amorphous silicon film (50 nm thickness) on inexpensive glass with the line laser (4.0 (mm)×38 (μm)). The result shows a high crystallinity and full width at half maximum (cm-1) < 7 (nm) at the peak position of 517 (cm-1) with Raman microscope, which was high uniformity in the in the 4mm length in long axis direction.
KEYWORDS: Laser processing, Laser applications, Copper, Laser welding, Reflectivity, Near infrared, High power lasers, Semiconductor lasers, Blue light emitting diodes
High power DDL operating in the 445 nm region are rapidly evolving as one of the preferred laser technologies for welding, cutting, and engraving of highly reflective materials. Until recently, industrial blue laser sources have lacked the beam quality for performing remote processing of materials at the large working distances that are often preferred in many processes. In this paper we will demonstrate laser material processing results obtained with a new generation of industrial blue lasers with BPP of 1.4 mm*mrad. We will present results from remote laser processes including, conduction welding, keyhole welding, and engraving at long working distances.
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