Ms. Kristin Wieching Profile

Kristin Wieching

at Fraunhofer Institut fur Lasertechnik

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Proceedings Article | 8 February 2007 Paper

Fiber-coupled diode laser modules with wavelengths around 2 µm

Mark Haverkamp, Kristin Wieching, Martin Traub, Konstantin Boucke

Proceedings Volume 6456, 64560U (2007) https://doi.org/10.1117/12.701869

KEYWORDS: Semiconductor lasers, Optical fibers, Polarization, Gallium antimonide, Absorption, Fiber coupled lasers, Collimation, Laser development, Fiber lasers, High power lasers

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The common wavelength regime for high-power diode laser modules is the range between 800 nm and 1000 nm. However, there are also many applications that demand for a wavelength of around 2 &mgr;m. This wavelength range is extremely interesting for applications such as the processing of plastics, medical applications as well as environmental analytics. The interest in lasers with this wavelength is based on the special absorption characteristics of different types of material: Numerous plastics possess an intrinsic absorption around 2 &mgr;m, so that the use of additives is no longer necessary. This is of great value especially for medical-technical products, where additives require a separate approval. Furthermore the longer wavelength allows the processing of plastics which are clear and transparent at the visible. In addition, water, which is an essential element of biologic soft tissue, absorbs radiation at the wavelength about 2 &mgr;m very efficiently. As radiation of this wavelength can be guided by glass fibers, this wavelength may be very helpful for laser surgery. Currently available lasers at the spectral range about 2 &mgr;m are solid-state lasers based on Ho- and Tmdoped crystals. These systems suffer from high purchase costs as well as size and weight. In contrast to this, diode lasers can be built more compact, are much cheaper and more efficient. For this background, GaSb based high-power laser diodes for the wavelength regime of 1.9 - 2.3 &mgr;m are developed at the Fraunhofer Institute for Solid State Physics (IAF). At the Fraunhofer Institute for Laser Technology (ILT), fiber-coupled laser diode modules based on these laser bars are designed and realized. A first module prototype uses two laser bars with a wavelength of 1.9 &mgr;m to provide an output power of approx. 15 W from a 600 &mgr;m, NA 0.22 fiber. The module setup as well as the characteristics of the laser bars at 1.9 &mgr;m wavelength are described in this paper.

Proceedings Article | 15 February 2006 Paper

Homogenization of high power diode laser beams for pumping and direct applications

Martin Traub, Hans-Dieter Hoffmann, Heinz-Dieter Plum, Kristin Wieching, Peter Loosen, Reinhart Poprawe

Proceedings Volume 6104, 61040Q (2006) https://doi.org/10.1117/12.645260

KEYWORDS: Waveguides, Semiconductor lasers, Homogenization, High power diode lasers, Near field, Reflection, Microlens array, Micro optics, Metals, Nd:YAG lasers

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High power diode lasers have become an established source for numerous direct applications like metal hardening and polymer welding due to their high efficiency, small size, low cost and high reliability. These laser sources are also used for efficient pumping of solid state lasers as Nd:YAG lasers. To increase the output power of diode lasers up to several kilowatts, the emitters are scaled laterally by forming a diode laser bar and vertically by forming a diode laser stack. For most applications like hardening and illumination, though, the undefined far field distribution of most commercially available high power diode laser stacks states a major drawback of these devices. As single emitters and bars can fail during their lifetime, the near field distribution does not remain constant. To overcome these problems, the intensity distribution can be homogenized by a waveguide or by microoptic devices. The waveguide segments the far field distribution by several total internal reflections, and these segments are overlaid at the waveguide's exit surface. By the microoptic device, the near field is divided into beamlets which are overlaid by a field lens. Both approaches are presented, and realized systems are described.

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