Micro- and nanodisk lasers have emerged as promising optical sources and probes for on-chip and free-space applications. However, the randomness in disk diameter introduced by standard nanofabrication makes it challenging to obtain deterministic wavelengths. To address this, we developed a photoelectrochemical (PEC) etching-based technique that enables us to precisely tune the lasing wavelength with subnanometer accuracy. We examined the PEC mechanism and compound semiconductor etching rate in diluted sulfuric acid solution. Using this technique, we produced microlasers on a chip and isolated particles with distinct lasing wavelengths. These precisely tuned disk lasers were then used to tag cells in culture. Our results demonstrate that this scalable technique can be used to produce groups of lasers with precise emission wavelengths for various nanophotonic and biomedical applications.
Emitting dipole orientation (EDO) is an important issue of emitting materials in organic light-emitting diodes for an increase of outcoupling efficiency of light. The origin of preferred orientation of emitting dipole of iridium-based heteroleptic phosphorescent dyes doped in organic layers is revealed by simulation of vacuum deposition using molecular dynamics along with quantum mechanical characterization of the phosphors. Consideration of both the electronic transitions in a molecular frame and the orientation of the molecules at the vacuum/molecular film interface allows quantitative analyses of the EDO depending on host molecules and dopant structures. Interactions between the phosphor and nearest host molecules on the surface, minimizing the non-bonded van der Waals and electrostatic interaction energies determines the molecular alignment during the vacuum deposition. Parallel alignment of the main cyclometalating ligands in the molecular complex due to host interactions rather than the ancillary ligand orienting to vacuumleads to the horizontal EDO.
High efficiency OLEDs based on phosphorescent, thermally activated delayed fluorescent (TADF) and fluorescent emitters will be presented. We will show that EQEs over 60% is achievable if OLEDs are fabricated using organic semiconductors with the refractive indices of 1.5 and fully horizontal emitting dipoles without any extra light extracting structure. We will also show that reverse intersystem crossing RISC rate plays an important role to reduce the efficiency roll-off in efficient TADF and fluorescent OLEDs and a couple to methods will be presented to increase the RISC rate in the devices.
We present the factors influencing the orientation of the phosphorescent dyes in phosphorescent OLEDs. And, we report that an OLED containing a phosphorescent emitter with horizontally oriented dipoles in an exciplex-forming co-host that exhibits an extremely high EQE of 32.3% and power efficiency of 142 lm/W, the highest values ever reported in literature. Furthermore, we experimentally and theoretically correlated the EQE of OLEDs to the PL quantum yield and the horizontal dipole ratio of phosphorescent dyes using three different dyes.
We present high efficiency orange emitting OLEDs with low driving voltage and low roll-off of efficiency using an exciplex forming co-host by (1) co-doping of green and red emitting phosphorescence dyes in the host and (2) red and green phosphorescent dyes doped in the host as separate red and green emitting layers. The orange OLEDs achieved a low turn-on voltage of 2.4 V and high external quantum efficiencies (EQE) of 25.0% and 22.8%, respectively. Moreover, the OLEDs showed low roll-off of efficiency with an EQE of over 21% and 19.6% at 10,000 cd/m2, respectively. The devices displayed good orange color with very little color shift with increasing luminance. The transient electroluminescence of the OLEDs indicated that both energy transfer and direct charge trapping took place in the devices.
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