The research and testing techniques of friction sensor is an important support for hypersonic aircraft. Compared with the conventional skin friction sensor, the MEMS skin friction sensor has the advantages of small size, high sensitivity, good stability and dynamic response. The MEMS skin friction sensor can be integrated with other flow field sensors whose process is compatible with MEMS skin friction sensor to achieve multi-physical measurement of the flow field; and the micro-friction balance sensor array enable to achieve large area and accurate measurement for the near-wall flow. A MEMS skin friction sensor structure is proposed, which sensing element not directly contacted with the flow field. The MEMS fabrication process of the sensing element is described in detail. The thermal silicon oxide is used as the mask to solve the selection ratio problem of silicon DRIE. The optimized process parameters of silicon DRIE: etching power 1600W/LF power 100 W; SF6 flux 360 sccm; C4F8 flux 300 sccm; O2 flux 300 sccm. With Cr/Au mask, etch depth of glass shallow groove can be controlled in 30°C low concentration HF solution; the spray etch and wafer rotate improve the corrosion surface quality of glass shallow groove. The MEMS skin friction sensor samples were fabricated by the above MEMS process, and results show that the error of the length and width of the elastic cantilever is within 2 μm, the depth error of the shallow groove is less than 0.03 μm, and the static capacitance error is within 0.2 pF, which satisfy the design requirements.
A high-performance aluminum nitride (AlN) differential resonant accelerometer is proposed. The inertia force of the proof mass is amplified to improve the sensitivity by two-stage microlever; the cross sensitivity is reduced by I-shape supporting beam; and the differential frequency detection scheme is used to decrease the effect of temperature common mode error. The accelerometer is mainly composed of proof mass, supporting beam, two-stage microlever and resonator, and its structural parameters are optimized by theoretical analysis and finite element simulation. The modal analysis shows that the fundamental frequencies of the two resonators are approximately 373.3 kHz, and the frequency differences from the interferential modes are about 9.4 kHz, which effectively achieves mode isolation. According to the simulation results of sensitivity, the sensitivity, linearity and cross sensitivity of AlN differential resonator accelerometer are 64.6 Hz/g, 0.787% and 0.0033 Hz/g, respectively. The simulation results of thermal stress show that the temperature sensitivity of a single resonator is about 490 Hz/°C, and the temperature sensitivity of output differential frequency is - 0.83 Hz/°C, which demonstrate that the differential frequency detection scheme can reduce the influence of temperature common mode error. All the above simulation results prove that this structural design of the accelerometer is feasible.
The resonant sensors based on aluminum nitride double-ended tuning fork (AlN DETF) have the characteristics of small size, good stability and reliability, fast response. In order to improve the sensitivity and resolution, it is necessary to analyze the influence of the structure parameters of vibrating beam on the sensitivity and signal power of AlN resonator. The multi-physics model of AlN DETF resonator was established to verify effect of single parameter on the sensitivity by pre-stressed eigenfrequency analysis. The relationships between signal power and length, width of vibrating beam were obtained by post-processing data of simulation results when the thickness remained constant. The results show that relative sensitivity and signal power are growing with opposite direction with the width or the length of the beam. Therefore, there is a design tradeoff between signal power and relative sensitivity of AlN resonator according to the process and structure strength. The optimized AlN DETF resonator was simulated, its sensitivity, signal power and Q are 56 Hz/μN, 6.8e-4 nW and 958, respectively.
In order to obtain the high-fidelity model of latching failure threshold power of the capacitive RF MEMS switch, it is necessary to find out the rough dielectric layer effect on its down-state capacitance degradation. The comparative modeling method between the 3-D electromagnetic simulation and the equivalent circuit simulation is proposed. First, the simulation curve of the switch isolation (S21) is attained at different roughness levels with the HFSS 3-D electromagnetic model. And then the simulation curve of the S21 of the ADS equivalent circuit model is consistent with the simulation result of the 3-D electromagnetic as far as possible by tuning the down-state capacitance in the equivalent circuit. Hence, the relationship between the dielectric layer roughness and the down-state capacitance is identified. By changing the roughness level of dielectric layer and repeating the above steps, the relationship between the dielectric layer roughness and the down-state capacitance degradation is identified. Rationality and feasibility of the method is verified by comparing the calculated values of the down-state capacitance with the measured values in a relevant literature. And analytical equation of the latching failure threshold power of the capacitive RF MEMS switch with perfect smooth dielectric layer is modified, according to the relationship between the dielectric layer roughness and the down-state capacitance degradation, which is also suitable for predicting the power handling capacity of the switch with rough dielectric layer.
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