In this paper, we present an nBn type dual-band InGaAs photodetector design with bias selectable cut-off wavelengths of 1.7 μm and 2.5 μm. InP based epilayer design consists of a compositionally graded quaternery InAlGaAs barrier region sandwiched between lattice matched InGaAs absorber and extended InGaAs absorber. In this study, we also provide a comparison between suggested nBn structure and a relatively usual npn InGaAs structure, using the same computational environment.
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