KEYWORDS: Process control, Semiconducting wafers, Control systems, Metrology, 3D modeling, Reconstruction algorithms, 3D metrology, Lead, Manufacturing, 3D displays
Advanced technology nodes require more and more information to get the wafer process well setup. The critical dimension of components decreases following Moore’s law. At the same time, the intra-wafer dispersion linked to the spatial non-uniformity of tool’s processes is not capable to decrease in the same proportions. APC systems (Advanced Process Control) are being developed in waferfab to automatically adjust and tune wafer processing, based on a lot of process context information. It can generate and monitor complex intrawafer process profile corrections between different process steps. It leads us to put under control the spatial variability, in real time by our SPC system (Statistical Process Control). This paper will outline the architecture of an integrated process control system for shape monitoring in 3D, implemented in waferfab.
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