AlGaN is a promising material to develop UVLEDs and HEMT devices due to the direct wide-band gap material. In the
present investigation, AlxGa1-xN alloys were grown on c-plane sapphire substrate by MOCVD. Al content x was varied
in the composition range 0≤×≤0.6. The thickness and Al composition of the AlGaN was determined by HRXRD. The
growth rate decreases on increasing the composition of Al. The critical thickness of pseudomorphic AlGaN layer
decreases on increasing the composition. Thick layers resulted in cracks and it is important to grow thick layers with
high aluminum content free from crack for deep UV LEDs.
In the present investigation, AlxGa1-xN/AlyGa1-yN/AlxGa1-xN double heterostructures have been grown
on sapphire substrate using MOCVD. The active layer Al0.18Ga0.82N thickness has been changed as 14.8 nm and 23.4
nm by keeping the thickness of the Al0.45Ga0.55N barrier layer as constant. It has been found that full width halfmaxium
(FWHM) of (002) undoped GaN without double heterostructures as 352 arc-secs where as for the double
heterostructures it is found to be 523 and 483 arc-sec for the active layer thickness of 14.8nm and 23.4nm
respectively. The photon decay time was found to be 125, 85 and 87 ps for undoped GaN, Al0.18Ga0.82N of thickness
14.8 nm and 23.4 nm respectively using Time Resolved Photoluminescence (TRPL).It has been observed that the
well width has no effect on the radiative decay time which has been reported for the first time.
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