Microcrystalline hydrogenated silicon based p-i-n photodiodes with an increased infrared sensitivity have been deposited by a new cyclic CVD method. The microcrystalline deice, when compared to the amorphous counterpart, presents an increased collection efficiency, dependent on bias voltage, in the red and near-infrared spectral region. The shape of the spectral response also depends on the details of the quality of the individual layers, like conductivity and thickness of the p-type contact layer. AS model for the electronic transport of (mu) c-Si:H p-i-n photodetectors is presented and supported by numerical simulation.
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