In this paper, two 2×2 Mach-Zehnder thermo-optic switches with and without two deep air trenches on both sides of the active arm are designed and fabricated on silicon-on-insulator(SOI) wafer. The experimental results show that switching powers of the two switches with and without trenches are 22.33 mW and 28.44 mW respectively when operated at 1560 nm wavelength. That is to say, the switching power of thermo-optic switch is reduced by 21.5 % due to the trenches. Moreover, the extinction ratios of the cross state are both over 32 dB.
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