We propose a new Fabry-Perot (FP) GaN laser fabrication method utilizing an epitaxial lateral overgrowth (ELO) technique and m-plane cleavability of the GaN crystal. The removed m-plane InGaN laser having a lasing wavelength 408. 1 nm operated at a low threshold current density as low as 2.15 kA/cm2. First, unlike a conventional ELO growth technique, we avoid coalescence between adjacent ELO layers, thus forming island-like ELO layer bars, which were later used as the base for FP GaN laser. Then, a laser device epilayers were epitaxially grown and laser ridge structure was fabricated on each of these non-coalesced island-like ELO base layers. Island-like ELO laser bar formation facilitates an easy removal of the laser bars mechanically using a commercially available adhesive polymer film. Our investigation found that cleavable m-plane of the GaN crystal assists in the liftoff of the fabricated m-plane InGaN FP lasers. We further confirm that the reported fabrication method can be adopted to semi-polar crystal plane orientations of GaN.
A fluidic assembly of III-nitride micro-light-emitting diodes (μLEDs) is demonstrated by applying external forces. This work introduces a solution-based mass transfer approach for inorganic semiconductor devices with the advantages in being material- and dimensional-agnostic. This method offers precise control in device alignment and orientation. The alignment of μLEDs in solution is controlled by acoustic focusing and the induced pressure forces, and the device orientation is modulated using magnetic field. The detailed mechanisms of the use of acoustic focusing and magnetic field are discussed. This fluidic assembly technique allows high throughput rate and roll-to-roll manufacturing, which is critical to the mass transfer of μLEDs for display and functional fabric applications.
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