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Dr. Satya R. Pattanaik
SPIE Involvement:
Author
Area of Expertise:
IMPATT , Microwave , Noise , Heterojunction , Simulation
Publications (1)
Proceedings Article | 15 October 2012 Paper
Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT
S. Pattanaik, J. Pradhan, S. Swain, P. Panda, G. N. Dash
Proceedings Volume 8549, 85490B (2012) https://doi.org/10.1117/12.926991
KEYWORDS: Ionization, Diodes, Electrons, Silicon carbide, Computer simulations, Doping, Physics, Microwave radiation, Data modeling, Instrument modeling
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