An experimental investigation for the polarization analysis of the high power GaSb-based semiconductor laser diodes emitting at 2.1μm in terms of measuring Stokes parameters has been exploited and adopted, which gives further insight into understanding, manipulating and applying the polarization properties of the laser diode. Results of output performance and polarization behavior of the laser are presented in the paper. The average linear polarization of the laser diode reaches 97.72% with output power exceeding 1W at 3.5A under CW operation at 20℃, which demonstrates the dominant position of linear polarization light of the output beam. Highly linear-polarized properties could not only enhance the performance of high power GaSb-based laser diodes in traditional applications in laser processing and beam combing, but also open new application fields such as parametric convention and coherent detection.
The growth conditions and lasing characteristics of the optically barrier-pumped GaSb - based semiconductor disk laser (SDL) emitting near 2 μm in an external cavity configuration are reported. It is made of a GaSb/AlAsSb Bragg reflector, a Ga0.8In0.2Sb/GaSb multi quantum-well active region and an Al0.8Ga0.2As0.03Sb0.97 window layer. Using an intracavity SiC heat spreader, a cw output power in excess of 1.12 W has been achieved at a heat sink temperature of 0 °C.
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