A series of benzo[d,d]thieno[3,2-b;4,5-b]dithiophene (BTDT) derivatives, end-functionalized with phenyl (PBTDT),
benzothiophenyl (BT-BTDT) were synthesized and characterized. A facile, one-pot synthesis of BTDT
was developed which enables the efficient realization of a new
BTDT-based semiconductor series for organic
thin-film transistors (OTFTs). The crystal structure of P-BTDT was determined via single-crystal X-ray
diffraction. Various combinations of surface treatment methods, substrate temperature, and deposition flux rate
sequences have significant effects on device performance. Films deposited on octadecyltrichlorosilane (OTS)-
treated SiO2 substrates under properly adjusted substrate temperature and deposition flux rate achieve an
efficaceous compromise between high film crystallinity and good film grain interconnectivity, resulting in good
OTFT performance, with mobility greater than 0.70 cm2V-1s-1 and Ion/Ioff greater than 108.
We successfully fabricated 4.7-inch organic thin film transistors array with 320×240 pixels on flexible substrate. The
mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.015 cm2/V-s, 1.1
V/dec, 10E6 and -3.2 V. After laminated Sipix electrophoretic media on OTFT array, a panel of 4.7 inch 320×240
OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than 130 . The pixel size in our panel is
300 μm × 300 μm, and the aperture ratio is over than 50 %. The OTFT channel length and width is 20 μm and 200μm,
respectively. The operation voltages used on the gate bias is -30 V during the row data selection and the gate bias are 0 V
during the row data hold time. The data voltages used on the source bias are -20 V, 0 V, and 20 V during display media
operation.
We successfully fabricated 5-inch organic thin film transistors array with 320×240 pixels on
flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing.
The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The
mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are:
0.01 cm2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 5
inch 320×240 OTFT-EPD was fabricated. All of process temperature in 10×10 OTFT-EPD is lower
than 150 . The pixel size in our panel is 300 μm × 300 μm, and the aperture ratio is 50 %. The OTFT
channel length and width is 20 μm and 200μm, respectively. We also used OTFT to drive EP media
successfully. The operation voltages that are used on the gate bias are -30 V during the row data
selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the
source bias are -20 V, 0 V, and 20 V during display media operation.
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