Mr. Uwe Kramer Profile

Uwe Kramer

at Qimonda Dresden GmbH & Co OHG

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Author

Publications (8)

Proceedings Article | 23 March 2009 Paper

CD-SEM parameter influence on image resolution and measurement accuracy

Benjamin Bunday, Uwe Kramer

Proceedings Volume 7272, 727204 (2009) https://doi.org/10.1117/12.816251

KEYWORDS: Scanning electron microscopy, Image resolution, Semiconducting wafers, Signal to noise ratio, Calibration, MATLAB, Monochromatic aberrations, Etching, Fourier transforms, Manufacturing

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Proceedings Article | 16 April 2008 Paper

Overlay control using scatterometry based metrology (SCOM) in production environment

Berta Dinu, Stefan Fuchs, Uwe Kramer, Michael Kubis, Anat Marchelli, Alessandra Navarra, Christian Sparka, Amir Widmann

Proceedings Volume 6922, 69222S (2008) https://doi.org/10.1117/12.771581

KEYWORDS: Overlay metrology, Scatterometry, Metrology, Semiconducting wafers, Signal processing, Lithography, Wafer testing, Sensors, Optical design, Spectroscopy

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Proceedings Article | 4 April 2008 Paper

Physical matching of CD-SEM: noise analysis and verification in FAB environment

Uwe Kramer, Alessandra Navarra, Goeran Fleischer, Jan Kaiser, Frank Voss, Galit Zuckerman, Roman Kris, Igal Ben-Dayan, Elad Sommer, Amir Len, Shalev Dror, Dirk Schöne, Stefano Ventola

Proceedings Volume 6922, 69221R (2008) https://doi.org/10.1117/12.776865

KEYWORDS: Signal to noise ratio, Scanning electron microscopy, Calibration, Critical dimension metrology, Image acquisition, Interference (communication), Sensors, Visualization, Metrology, Statistical analysis

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CD-SEMs fleet matching is a widely discussed subject and various approaches and procedures to determine it were described in the literature [1,2,4-6]. The different approaches for matching are all based on statistical treatment of CD measurements that are performed on dedicated test structures. The test structures are a limited finite set of features, thus the matching results should be treated as valid only for the specific defined set of test features. The credibility of the matching should be in question for different layers and specifically production layers. Since matching is crucial for reliable process monitoring by a fleet of CD-SEMs, the current matching approaches must be extended so that the matching will be only tool dependent and reproducible on all layers regardless their specific material or topographic characteristics. In our previous work [1] the new approach named "Physical Matching" was introduced and a new matching procedure based on the direct estimation of tool physical parameters was described. This approach extends the conventional matching methods to enable significant improvement of the matching between CD-SEM tools in production environment. In this work we present results of applying the physical matching method in FAB environment by using the physical parameters of the brightness and SNR, extend it to noise frequency domain characteristics monitoring, and enhanced collection uniformity. Improving the collection uniformity is also demonstrated and proved to be a significant factor. The advantage of the physical matching with noise spectra analysis approach for a case study is demonstrated. This method will enable detection of specific reasons for mismatching between the tools, based on analysis of specific frequencies that are resulted from known mechanical/electrical noise. The proposed procedure allows tool problems fixing before CD measurements are affected. In order to get a reliable visualization of the difference between two systems, new automatic and manual tool finger print methods were developed. The application of the proposed approach to vendor to vendor matching problem is considered.

Proceedings Article | 24 March 2008 Paper

CD-SEM contour-based process monitoring in DRAM production environment

Uwe Kramer, David Jackisch, Robert Wildfeuer, Stefan Fuchs, Franck Jauzion-Graverolle, Gilad Ben-Nahumb, Ovadya Menadeva, Stefano Ventola

Proceedings Volume 6922, 69221C (2008) https://doi.org/10.1117/12.774114

KEYWORDS: Electrochemical etching, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Computer aided design, Metrology, Calibration, Finite element methods, Environmental monitoring

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Proceedings Article | 24 March 2006 Paper

Automatic CD-SEM offline recipe creation for OPC qualification and process monitoring in a DRAM pilot-fab environment

Uwe Kramer, Thomas Marschner, Dieter Kaiser, Marc Winking, Christian Stief, Stefano Ventola, Dan Lewitzki, Zamir Abraham, Ovadya Menadeva, Sam Shukrun

Proceedings Volume 6152, 61520L (2006) https://doi.org/10.1117/12.654787

KEYWORDS: Optical proximity correction, Semiconducting wafers, Pattern recognition, Computer aided design, Scanning electron microscopy, Image processing, Time metrology, Photomasks, Manufacturing, Inspection

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Proceedings Article | 15 March 2006 Paper

Application of integrated scatterometry measurements for a wafer-level litho feedback loop in a high-volume 300 mm DRAM production environment

Uwe Kramer, Goeran Fleischer, Thomas Marschner, Steffen Hornig, Heiko Weichert, Dave Hetzer

Proceedings Volume 6155, 615509 (2006) https://doi.org/10.1117/12.682683

KEYWORDS: Semiconducting wafers, Scatterometry, Metrology, Lithography, 3D modeling, Scatter measurement, Critical dimension metrology, Process control, Process modeling, Data processing

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Proceedings Article | 10 May 2005 Paper

Qualification of an integrated scatterometer for CD measurements of sub-100nm resist structures in a high-volume 300mm DRAM production environment

Thomas Marschner, Goeran Fleischer, Stefan Fuchs, Michael Friedrich, Uwe Kramer, Matthias Voigt, Dave Hetzer

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598420

KEYWORDS: Semiconducting wafers, Scatterometry, Scatter measurement, Silicon, System integration, Process control, Scanning electron microscopy, Critical dimension metrology, Metrology, Inspection

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Proceedings Article | 10 May 2005 Paper

Impact of averaging of CD-SEM measurements on process stability in a full volume DRAM production environment

Thomas Marschner, Uwe Kramer, Anice Lee, Christian Stief

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598426

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Etching, Process control, Metrology, Precision measurement, Photomasks, Feedback loops, Feedback control, Environmental sensing

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Showing 5 of 8 publications

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