Our work presents research of the optical Ge-Si glass composition doped with Er3+, Yb3+ ions and Bi optically active centers (BACs), which are useful for optically amplifiers for a double C- and U-band. The luminescence response in the 1500 – 1700 nm range was tested with various types of glass with different content of modifier and activators in the 1500 – 1700 nm range. The maxima of the luminescence intensity and the spectral full width were determined by modified reflex spectrum method measurement. The prepared Ge-Si glass doped with Er3+ ions and BACs exhibited strong and balanced emission in the 1520 – 1680 nm range after pumping at 1480 nm. The specific balanced optical differential gain of up to 0.2 dB/cm in the C-band and simultaneously 0.2 dB/cm in the U-band was measured. The measured results prove that the investigated germano-silicate glasses doped with Er3+ and Bi ions are promising for optical amplifiers working in the optical C- and U-bands.
This paper summarizes the results of the gain transmission characteristics measurement carried out on the new ion
exchange Ag+ - Na+ optical Er3+ and Yb3+ doped active planar waveguides realized on a silica based glass substrates. The
results were used for optimization of the precursor concentration in the glass substrates. The gain measurements
were performed by the time domain method using a pulse generator, as well as broadband measurement method using
supercontinuum optical source in the wavelength domain. Both methods were compared and the results were graphically
processed. It has been confirmed that pulse method is useful as it provides a very accurate measurement of the gain -
pumping power characteristics for one wavelength. In the case of radiation spectral characteristics, our measurement
exactly determined the maximum gain wavelength bandwidth of the active waveguide. The spectral characteristics of
the pumped and unpumped waveguides were compared. The gain parameters of the reported silica-based glasses can be
compared with the phosphate-based parameters, typically used for optical active devices application.
This paper reports on the design of the surface enhanced Raman spectroscopy (SERS) structures that were optimized
through computation and simulation to obtain the best enhancement of the surface plasmon-polariton (SPP) response on
these structures. The structure of the silver nano-grating was designed, fabricated, optimized and measured. The
enhancement factor and the increase in the absorption capabilities associated with SPP were evaluated. The rigorous
coupled wave analysis (RCWA) and finite-difference time-domain (FDTD) computational/simulation methods were
utilized. The comparison between the computation simulation outputs and the measured outputs of the fabricated
samples was performed.
The paper deals with the design of an micro-optical part of a WDM transceiver based on the circle volume holographic grating triplexer (VHGT) topology. The work is focused on detail description of the bidirectional micro-optical insertion system, especially on the coupling in the transmission direction of the WDM transceiver optical part. This micro-optical wavelength distribution system is imagine transmission system consisted of collimating cylindrical lenses set in the circle topology with the VHGT filter placed in the middle of the circle. The topology is described by ray matrices equations, calculated using analytic and numeric methods and optically measured. Considering simulation and measurement results of micro-optical insertion system the influence of these characteristics on ray path attenuation, diffraction efficiency and transceiver performance is estimated. The paper also discusses limits and conditions of the laser asymmetrical beam focus into the input/output optical fiber.
Design, fabrication and RNF measurement of the optical multi-mode interference power splitter 1 to 2 with graded refractive index is reported. The design was developed by utilizing numerical solutions using the finite difference beam propagation method for operation wavelength 1550 nm. The deposition tests that led to the fabrication of the proposed structures were made after designing the structures. Several samples of optical MMI splitters 1x2 were obtained by Ag+↔Na+ two step field assisted ion exchange process in molten salt into a new special optical glass substrate for ion exchange technology. The refractive index profile of the channel waveguide was verified by the direct measurement near-filed method by the Refractive Near Field Profilometer.
We report about a design of a bi-directional planar optical multiplex/demultiplex filter (triplexer) for the optical part of planar hybrid WDM bi-directional transceiver in fiber-to-the-home (FTTH) PON applications. The triplex lightwave circuit is based on the Epoxy Novolak Resin SU-8 waveguides on the silica-on-silicon substrate with Polymethylmethacrylate cladding layer. The triplexer is comprised of a linear butterfly concept of multimode interference (MMI) coupler separating downstream optical signals of 1490 nm and 1550 nm. For the upstream channel of 1310 nm, an additional directional coupler (DC) is used to add optical signal of 1310 nm propagating in opposite direction. The optical triplexer was designed and optimized using beam propagation method. The insertion losses, crosstalk attenuation, and extinction ratio for all three inputs/outputs were investigated. The intended triplexer was designed using the parameters of the separated DC and MMI filter to approximate the idealized direct connection of both devices.
This paper presents the design results, simulation and construction of WDM wavelength division multiplexer-bidirectional transceiver module (WDM-Transceiver) for the passive optical network (PON) of a fiber to the home FTTH topology. WDM transceiver uses a microoptics hybrid integration technology with volume holographic Bragg grating triplex filter (VHGT) and a collimation lenses for wavelength multiplexing/ demultiplexing.
We report about fabrication and properties of Gallium Nitride (GaN) layers doped with erbium or mixture of erbium and
ytterbium ions. Transmission spectra in the spectral range from 280 to 800 nm taken by the spectrometer Varian Cary
50 showed that the increasing concentration of the dopants shifts the absorption edge to the lower wavelengths. Optical
band gap Eg was determined from the absorption coefficient values using Tauc's procedure and the obtained values
varied from 3.08 eV to 3.89 eV depending on the erbium or erbium plus ytterbium doping. Photoluminescence emission
at 1 530 nm due to the Er3+ intra-4f
4I13/2 → 4I15/2 transition was observed by using excitation of semiconductor lasers
operating at 980 nm.
We report about design and construction of the bidirectional transceiver TRx module for subscriber part of the passive
optical network PON for a fiber to the home FTTH topology. The TRx module consists of a epoxy novolak resin
polymer planar lightwave circuit (PLC) hybrid integration technology with volume holographic grating triplex filter
VHGT, surface-illuminated photodetectors and spot-size converted Fabry-Pérot laser diode in SMD package. The
hybrid PLC has composed from a two parts-polymer optical waveguide including VHGT filter section and
a optoelectronic microwave section. The both parts are placed on the composite substrate.
This article describes design of the photonic receiver composed of the system polymer planar waveguides, InGaAs p-i-n
photodiode and integrated HBT amplifier on a low loss composite substrate. The photonic receiver was the main part of
the hybrid integrated microwave optoelectronic transceiver TRx (transciever TRx) for the optical networks PON (passive
optical networks) with FTTH (fiber-to-the-home) topology. In this article are presented the research results of threedimensional
field between output facet of a optical waveguide and p-i-n photodiode. In terms of our research, there was
optimized the optical coupling among the facet waveguide and pi-n photodiode and the electrical coupling among p-i-n
photodiode and input of HBT amplifier. The hybrid planar lightwave circuit (PLC) of the transceiver TRx will be
composed from a two parts - polymer optical waveguide including VHGT filter section and a optoelectronic microwave
section.
We report about properties of epoxy novolak resin polymer doped with dysprosium ions. The polymer layers were
fabricated by spin-coating onto silicon substrates, or pouring epoxy novolak resin solution into bottomless molds placed
on a quartz substrate and leaving them to dry. Rather strong bands around 3366 cm-1 in the infrared spectra indicated
presence of the O-H groups. Absorption measurements were done in the spectral range from 300 nm to 3000 nm and
showed six strong bands at 758 nm (6F3/2), 807 nm (6F5/2), 906 nm (6F7/2), 1100 nm (6F9/2), 1280 nm (6F11/2) and 1685 nm
(6H11/2) corresponding to Dy3+ ions. Optical band gap Eg was determined from the absorption coefficient values using
Tauc's procedure, i.e., from the relationship αhv = A(hv - Eg)2 and the obtained values varied from 3.489 eV to 3.539 eV
depending on the amount of dysprosium ions involved in the samples. Photoluminescence spectra around 1300 nm were
investigated by using excitation of He-Ne laser (632.8 nm) and two semiconductor lasers (980 nm and 827 nm).
We report about theoretical results and experiments, which led to the demonstration of optical bistability on the specially modified laser diode (LD) created on the double heterostructure Ga1-xAlxAl/GaAs with saturable absorption section. To prove the bistability, the time method for bistability impulse verification (BIV) by bistable laser diode (BLD) was proposed. With the use of the BIV method, basic parameters of the hysterisis loop of the W-A characteristic samples of realized BLD were determined. Also the mathematic model of the W-A characteristic was derived, used for the simulation of the characteristic for the realized BLD. Element values of the electrical equivalent circuit of the BLD for small changes of signal were calculated for selected operating points of the simulated W-A characteristics. The dependency of bistability on the temperature is monitored by measuring the BLD W-A characteristic.
We report about properties of Gallium Nitride layers doped by Erbium and Erbium/Ytterbium ions. The GaN layers were fabricated by Metal Organic Chemical Vapor Deposition on sapphire substrate, and Er3+ and Yb3+ ions were incorporated into the deposited layers by using ion implantation. After the implantation the samples were annealed in nitrogen atmosphere. The structures of the GaN samples were examined by the X-Ray Diffraction analysis; composition of the samples was measured by Rutherford Backscattering Spectroscopy and Elastic Recoil Detection Analysis. The GaN layers had single crystalline hexagonal wurtzite structure and content of Er3+ and Er3+\Yb3+ ranged from 0.05 to 3.38 at. %. The photoluminescence measurement was carried out at excitation of λex = 632.8 nm (temperature 4 K) and λex = 980 nm (room temperature). Photoluminescence spectra taken at 4 K showed typical erbium 4I13/2→4I15/2 emission bands. Some of our samples exhibited the desired emission even at the room temperature, which indicated that the samples were of a good quality what concerned their crystallographic homogeneity, as well as distribution and appropriate concentration of the Er3+ and Yb3+.
We report about theoretical results and experiments, which led to the demonstration of optical bistability on the specially modified laser diode (LD) created on the double heterostructure Ga1-xAl/GaAs with saturable absorbtion section. To prove the bistability, the time method for bistability impulse verification (BIV) by bistable laser diode samples of realized BLD were determined. Also the mathematic model of the W-A characteristic was derived, used for the simulation of the characteristic for the realized BLD. Element values of the electrical equivalent circuit of the BLD for small hanges of signal were calculated for selected operating points of the simulated W-A characteristics. The dependency of bistability on the temperature is monitored by measuring the BLD W-A characteristic.
We report about theoretical results and experiments, which led to the demonstration of optical bistability on the specially modified laser diode (LD) created on the double heterostructure Ga1-x AlxAl/GaAs with saturable absorption section. To prove the bistability, the time method for bistability impulse verification (BIV) by bistable laser diode (BLD) was proposed. With the use of the BIV method, basic parameters of the hysterisis loop of the W-A characteristic samples of realized BLD were determined. Also the mathematic model of the W-A characteristic was derived, used for the simulation of the characteristic for the realized BLD. Element values of the electrical equivalent circuit of the BLD for small changes of signal were calculated for selected operating points of the simulated W-A characteristics. The dependency of bistability on the temperature is monitored by measuring the BLD W-A characteristic.
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