Dr. Yan Busby Profile

Dr. Yan Busby

at Institut Franco-Allemand de Recherches de Saint-Louis

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Publications (3)

Proceedings Article | 14 September 2018 Presentation + Paper

Combined AFM and ToF-SIMS analyses for the study of filaments in organic resistive switching memories

Yan Busby, Alexis Franquet, Valentina Spampinato, Giulia Casula, Annalisa Bonfiglio, Piero Cosseddu, Jean-Jacques Pireaux, Laurent Houssiau

Proceedings Volume 10738, 1073814 (2018) https://doi.org/10.1117/12.2319923

KEYWORDS: Silver, Electrodes, Atomic force microscopy, Switching, Ions, Diffusion, Switches, Metals, Remote sensing

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Proceedings Article | 7 September 2018 Presentation + Paper

XPS depth profiles of organo lead halide layers and full perovskite solar cells by variable-size argon clusters

Yan Busby, Celine Noël, Sara Pescetelli, Antonio Agresti, Aldo Di Carlo, Jean-Jacques Pireaux, Laurent Houssiau

Proceedings Volume 10724, 1072408 (2018) https://doi.org/10.1117/12.2320488

KEYWORDS: Lead, Perovskite, Argon, Sputter deposition, Interfaces, Solar cells, Chemical species, Ion beams, Ions, X-rays

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Organic and inorganic materials are more and more frequently combined in high-performance hybrid electronic and photonic devices. For such multilayered stacks, the identification of layers and interface defects by depth profile analysis is a challenging task, especially because of the possible ion beam induced modifications. This is particularly true for perovskite solar cells stacks that in a mesoscopic structure usually combine a metal electrode, a mesoscopic conductive oxide layer, an intrinsically hybrid light absorber, an organic hole extraction layer and a metal counter electrode. While depth profile analysis with X-ray photoelectron spectroscopy (XPS) was already applied to investigate these devices, the X-ray and ion beam induced modifications on such hybrid layers have not been previously investigated. In this work we compare the profiles obtained with monatomic Ar⁺ beam at different energies, with the ones obtained with argon ion clusters (Ar_n⁺) with different sizes (150<n<1000) and energies (up to 8 keV). A systematic study is performed on full mesoscopic perovskite (CH₃NH₃PbI₃) solar cells and on model hybrid samples ((FA_xCs_1-xPbI₃)0.85 (MAPbBr₃)_0.15)/TiO₂). The results show that for monatomic beams, the implantation of positively charged atoms induces the surface diffusion of free iodine species from the perovskite which modifies the I/Pb ratio. Moreover, lead atoms in the metallic state (Pb⁰ ) are found to accumulate at the bottom of the perovskite layer where the Pb⁰ /Pb_tot fraction reaches 50%. With argon clusters, the ion beam induced diffusion of iodine is reduced only when the etch rate is sufficiently high to ensure a profile duration comparable with low-energy Ar⁺. Convenient erosion rates are obtained only for n=300 and n=500 clusters at 8 keV, which have also the advantage of preserving the TiO₂ surface chemistry. However, with argon cluster ions, Pb⁰ particles in the perovskite are less efficiently sputtered which leads to the increase of the Pb⁰ /Pb_tot fraction (up to 75%) at the perovskite/TiO₂ interface. Finally, ion beam and X-ray induced artifacts on perovskite absorbers can be reasonably neglected for fast analysis conditions in which the exposure time is limited to few hours.

Proceedings Article | 5 October 2015 Presentation

Characterizing filamentary switching in resistive memories (Presentation Recording)

Yan Busby, Jean-Jacques Pireaux

Proceedings Volume 9569, 956905 (2015) https://doi.org/10.1117/12.2187472

KEYWORDS: Switching, Electrodes, Transmission electron microscopy, Polymers, Metals, Organic electronics, Ions, Mass spectrometry, X-ray microscopy, X-rays

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Characterizing filamentary switching in resistive memories For many organic, inorganic and hybrid memory devices the resistive switching mechanism is well known to rely on filament formation [1]. This implies that localized conductive paths are established between the two terminal electrodes during the forming step. This filaments sustain the current flow when the memory is in the low conductive state and they can be ruptured and possibly re-formed for more than hundreds of I-V cycles. The nature and morphology of filaments has been long time debated especially for organic memories. The filament size, density and formation mechanism have been very challenging to be characterized, and need appropriate experimental techniques. However, filaments in organic memories have been recently identified and characterized by cross-section transmission electron microscopy (TEM), conductive-AFM, AFM-tomography and through depth profile analysis combining Time-of-flight secondary ions mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). In particular, 3D spectroscopic images obtained with ToF-SIMS give access for the first time to filament formation process and rupture mechanism. From these results, a clear picture of the filament(s) dynamics during memory operation can be drawn. In this contribution, recent results showing filaments in memories based on different structures and architectures will be discussed. The memories are based on insulating polymers (polystyrene [2] and poly methyl methacrylate [3]), conductive polymers/nanocomposites (polyera N1400 with metal NPs [4]), and small semiconducting molecules (Tris(8-hydroxyquinolinato)aluminium - Alq3 [5]). The results show that resistive switching clearly involves the inhomogeneous metal diffusion in the organic layer taking place during the top electrode deposition and during memory operation. This may be of great relevance in many other organic electronics applications. REFERENCES [1] S. Nau, S. Sax, E.J.W. List-Kratochvil, Adv. Mater. 2014, 26, 2508–2513. [2] Y. Busby, N. Crespo-Monteiro, M. Girleanu, M. Brinkmann, O. Ersen, J.-J. Pireaux, Organic Electronics 2015, 16, 40–45. [3] C. Wolf, S. Nau, S. Sax, Y. Busby, J.-J. Pireaux, E.J.W. List-Kratochvil (under submission). [4] G. Casula, P. Cosseddu, Y. Busby, J.-J. Pireaux, M. Rosowski, B. Tkacz Szczesna, K. Soliwoda, G. Celichowski, J. Grobelny, J. Novák, R. Banerjee, F. Schreiber, A. Bonfiglio, Organic Electronics, 2015, 18, 17-23. [5] Y. Busby, S. Nau, S. Sax, E.J.W. List- Kratochvil, J. Novak, R. Banerjee, F. Schreiber, J.-J. Pireaux, (under submission)

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