In the present talk we discuss the application of Template-Assisted Selective Epitaxy (TASE) for the monolithic integration of III-V active photonic devices on silicon. The main concept of TASE relies on the guided growth of III-Vs within a confined oxide template. At one extremity of the template there is access to silicon to start the nucleation, and subsequently it is the template which guides the growth progression. This decoupling of the resulting geometry from the growth mode and substrate orientation, results in a larger processing window as we no longer rely on the growth conditions to tune the geometry, as well as a number of other advantages. A further unique advantage of TASE for silicon photonics applications is that it allows for the truly local integration of III-V material at precisely defined positions, since the location of the III-V may be defined with nm-scale precision in the same lithographic step as silicon passives. TASE was originally developed for electronics, but in recent years we have expanded it to enable several photonic devices. In the present talk, I will discuss our work on GaAs and InP microdisk lasers fabricated by either direct growth or via the use of micro-substrates. These devices show lasing at room temperature around 870 nm with thresholds of about 10 pJ/pulse. We also explore the use of metal-clad cavities for further light confinement.
We will present our recent work on III-V micro-cavity lasers monolithically grown on silicon substrates. The III-V material is directly grown using Template-Assisted-Selective-Epitaxy (TASE) within oxide cavities patterned using conventional lithographic techniques on top of the silicon substrate. This allows for the local integration of single-crystal III-V active gain material. Two variations of this technique will be discussed; the direct growth of disc lasers and the two-step approach via a virtual substrate. Room temperature single-mode optically pumped lasing is achieved in GaAs micro-cavity lasers, and devices show a remarkably low shift of the lasing threshold (T0=170K) with temperature. Dependence on cavity geometry and pump power will be discussed.
We present the first investigation of optomechanics in an integrated one-dimensional gallium phosphide (GaP) photonic crystal cavity. The devices are fabricated with a newly developed process flow for integration of GaP devices on silicon dioxide (SiO2) involving direct wafer bonding of an epitaxial GaP/AlxGa1-xP/GaP heterostructure onto an oxidized silicon wafer. Device designs are transferred into the top GaP layer by inductively-coupled-plasma reactive ion etching and made freestanding by removal of the underlying SiO2. Finite-element simulations of the photonic crystal cavities predict optical quality factors greater than 106 at a design wavelength of 1550 nm and optomechanical coupling rates as high as 900 kHz for the mechanical breathing mode localized in the center of the photonic crystal cavity. The first fabricated devices exhibit optical quality factors as high as 6.5 × 104, and the mechanical breathing mode is found to have a vacuum coupling rate of 200 kHz at a frequency of 2.59 GHz. These results, combined with low two-photon absorption at telecommunication wavelengths and piezoelectric behavior, make GaP a promising material for the development of future nanophotonic devices in which optical and mechanical modes as well as high-frequency electrical signals interact.
We have recently developed a novel III-V integration scheme, where III-V material is grown
directly on top of Si within oxide nanotubes or microcavities which control the geometry of
nanostructures. This allows us to grow III-V material non-lattice matched on any crystalline
orientation of Si, to grow arbitrary shapes as well as abrupt heterojunctions, and to gain more
flexibility in tuning of composition. In this talk, applications for electronic devices such as
heterojunction tunnel FETs and microcavity III-V lasers monolithically integrated on Si will be
discussed along with an outlook for the future.
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