Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by
radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films
obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P
content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc
formula was used in calculating the optical band gaps of the thin films in both methods. The results show that
Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films
experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e.,
the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration
respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis
spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in
practical applications.
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