Mode-division multiplexing (MDM) technology enables high-bandwidth data transmission using orthogonal waveguide modes to construct parallel data streams. However, few demonstrations have been realized for generating and supporting high-order modes, mainly due to the intrinsic large material group-velocity dispersion (GVD), which make it challenging to selectively couple different-order spatial modes. We show the feasibility of on-chip GVD engineering by introducing a gradient-index metamaterial structure, which enables a robust and fully scalable MDM process. We demonstrate a record-high-order MDM device that supports TE0–TE15 modes simultaneously. 40-GBaud 16-ary quadrature amplitude modulation signals encoded on 16 mode channels contribute to a 2.162 Tbit / s net data rate, which is the highest data rate ever reported for an on-chip single-wavelength transmission. Our method can effectively expand the number of channels provided by MDM technology and promote the emerging research fields with great demand for parallelism, such as high-capacity optical interconnects, high-dimensional quantum communications, and large-scale neural networks.
Fiber-chip edge couplers are extensively used in integrated silicon photonic for the coupling of light between optical fibers and planar silicon waveguide circuits. We experimentally demonstrate several novel designs of edge couplers with eased fabrication process, i.e. fork shape and dual-trident SWG shape, based on Silicon-on-Insulator platform. These edge couplers show low coupling losses and possess large bandwidths simultaneously.
We discuss light emitters and modulators in silicon photonic interconnects. In particular, we experimentally demonstrate resonant luminescence from Ge quantum dots embedded in a photonic crystal ring resonator (PCRR) at room temperature. Six sharp resonant peaks are observed, which correspond to the resonant modes supported by the PCRR. We further study a high speed silicon-graphene nanobeam modulator, and a silicon spatial light modulator. These devices show great potential in future high density and high capacity interconnection systems.
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