The simulations of quasi one-dimensional (1D) and quasi three-dimensional (3D) device process and optoelectronic performance were conducted on silicon APD array pixels using Silvaco, realizing micro region analysis of the electric field distribution, avalanche gain, and photoelectric response characteristics of the APD photosensitive region. The multiplication coefficients corresponding to different positions of APD pixel were obtained and compared with the ideal 1D device structure. The results show that the multiplication factor of the center region of APD pixel is significantly higher than that of the edge of the photosensitive region. The simulation of microlens to converge the incident light to the center of the photosensitive region confirmed the increasement of APD avalanche multiplication current, i.e. the quasi 3D structural APD response is increased from 13.6 A/W to 54.8 A/W, and the effective fill factor is increased from 20.9% to 84.2%. Thus, the utilization rate of incident light is effectively improved.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.