In this paper, we demonstrate two types of new photodiode array (PDA) with fast readout speed and high stability to
ultraviolet (UV) light exposure. One is a high full well capacity sensor specialized for absorption spectroscopy, the other
one is a high sensitivity sensor for emission spectroscopy. By introducing multiple readout paths along the long side of
the rectangle PD, both two PDAs have achieved more than 150 times faster readout speed compared with a general PDA
structure with a single readout path along the short side of PD. By introducing a photodiode (PD) structure with a thin
and steep dopant profile p+ layer formed on a flattened Si surface, a higher stability of the light sensitivity to UV light
exposure was confirmed compared with a general PD structure for conventional PDAs.
In this work, by optimizing the structure and thickness of the on-chip multilayer dielectric stack using SiO2 and low
extinction coefficient Si3N4 with the high UV-light sensitivity photodiode technology, high external Q.E. and high
stability to UV-light were both successfully obtained. By changing the structure of on-chip multilayer dielectric stack
and film thickness, we obtained the photodiode with the high external Q.E. in the desired UV-light region.
In this work, n+pn-type photodiodes with various surface n+ layer profiles formed on the atomically flat Si surface were
evaluated to investigate the relationships between the surface photo-generated carrier drift layer dopant profiles with a
high uniformity and sensitivity and stability to UV-light. The degradation mechanism of photodiode sensitivitiy in UVlight
wavelength due to UV-light exposure is explained by the changes in the fixed charges and the interface states at
Si/SiO2 system above photodiode. Finally, a design strategy of photodiode dopant profile to achieve a high sensitivity
and a high stability to UV-light is proposed.
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