Recent improvement in nitride lasers

Shingo Masui; Yoshitaka Nakatsu; Daiji Kasahara; Shin-ichi Nagahama

doi:10.1117/12.2247988

16 February 2017 Recent improvement in nitride lasers

Shingo Masui, Yoshitaka Nakatsu, Daiji Kasahara, Shin-ichi Nagahama

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101041H (2017) https://doi.org/10.1117/12.2247988
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

We report our recent improvement of watt class blue and green GaN based LDs. These LDs were grown on c-face GaN substrates by metal organic chemical deposition. The laser chip was mounted on the heat sink by the junction down method in TO-ø9 mm package for the suppression of the thermal resistance. The optical output power of 455nm blue LDs was obtained above 4.7 W at injection current of 3A. The average lifetime was estimated to be over 30,000 hours at case temperature of 65 degree C under 3A. In green LDs, 1 watt class 532 nm green LDs as same wavelength as second harmonic generation (SHG) green laser was developed and the wall plug efficiency was 12.1 %. And the longer lasing wavelength was achieved to 537 nm.

Citation Download Citation

Shingo Masui, Yoshitaka Nakatsu, Daiji Kasahara, and Shin-ichi Nagahama "Recent improvement in nitride lasers", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041H (16 February 2017); https://doi.org/10.1117/12.2247988

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