Presentation + Paper
5 March 2022 Edge-emitting blue laser diode with high CW wall-plug efficiency of 50 %
Author Affiliations +
Abstract
This paper reports the latest device performance of high-power blue laser diodes (LDs). The epitaxial structures of LDs were grown by metal organic chemical vapor deposition (MOCVD) on C-plane free-standing GaN substrates. And a ridge type structure was formed at the top of p-type layers. The ridge width of the LD was 45 μm. Electrodes of the n-type and p-type were formed at the substrate and the ridge respectively. And the front and rear sides were obtained by cleavage at the m-plane surface. These faces were covered by dielectric mirrors. Every LD chip was mounted on a heat sink using a junction down method in a TO-Φ9 mm package for suppressing thermal resistance. We optimized the epitaxial and the device structures for high efficiency and high optical output power. A New developed 455 nm blue LD showed the optical output power and the voltage of 5.73 W and 3.82 V at the forward current of 3 A under Continuous Wave (CW) operation. The wall-plug efficiency (WPE) of the 455 nm blue LD was 50.0 % at 3 A. This is the highest WPE reported so far. The peak WPE of the 455 nm LD was 51.2 % at the forward current of 2 A.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshitaka Nakatsu, Yoji Nagao, Tsuyoshi Hirao, Kazuma Kozuru, Tatsuya Kanazawa, Shingo Masui, Eiichiro Okahisa, Tomoya Yanamoto, and Shin-ichi Nagahama "Edge-emitting blue laser diode with high CW wall-plug efficiency of 50 %", Proc. SPIE 12001, Gallium Nitride Materials and Devices XVII, 1200109 (5 March 2022); https://doi.org/10.1117/12.2601154
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KEYWORDS
Semiconductor lasers

Continuous wave operation

Light sources and illumination

Fiber optics

High power lasers

Laser development

Metalorganic chemical vapor deposition

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