E-beam inspection of single exposure EUV direct print of M2 layer of N10 node test vehicle

Sayantan Das; Ryo Shimoda; Shinji Mizutani; Sandip Halder; Kotaro Maruyama; Philippe Leray; Yuichiro Yamazaki

doi:10.1117/12.2515809

26 March 2019 E-beam inspection of single exposure EUV direct print of M2 layer of N10 node test vehicle

Sayantan Das, Ryo Shimoda, Shinji Mizutani, Sandip Halder, Kotaro Maruyama, Philippe Leray, Yuichiro Yamazaki

Proceedings Volume 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII; 109590H (2019) https://doi.org/10.1117/12.2515809
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Up until now, the main driving force for the semiconductor industry is the continual shrinkage of device feature sizes, thereby incorporating more devices per unit area, reducing manufacturing cost and enhancing their performance have been achieved. However, the shrinkage of feature size leads to a reduction of process window imposing an extremely tight requirement for parameters such as critical dimension (CD), edge and width roughness of spaces/trenches, contacts, lines, and tip to tip (T2T) values. At sub 14 nm technology nodes these parameters have a significant influence on the overall device performance. With EUV based pattering becoming the sole option at these advanced nodes, a thorough characterization of the patterning process is of utmost importance before it can be a high-volume manufacturing solution.

In this work, we show how e-beam inspection has been used to characterize a single exposure EUV M2 (Metal 2 layer, BEoL) to have an understanding of the different hotspots and intra-field signatures present. Design Based Metrology (DBM) with wide SEM image was employed to measure CD distribution and Edge Placement Error (EPE) distribution of metal layer pattern on the 10nm logic wafer.

Citation Download Citation

Sayantan Das, Ryo Shimoda, Shinji Mizutani, Sandip Halder, Kotaro Maruyama, Philippe Leray, and Yuichiro Yamazaki "E-beam inspection of single exposure EUV direct print of M2 layer of N10 node test vehicle", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109590H (26 March 2019); https://doi.org/10.1117/12.2515809

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
14 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Scanning electron microscopy

Critical dimension metrology

Metrology

Distortion

Extreme ultraviolet lithography

Logic

Metals

Show All Keywords

Keywords/Phrases

Search In:

Publication Years