Measurement of latent image in resist using scanning probe techniques

Luke T. Long; Andrew R. Neureuther; Patrick P. Naulleau

doi:10.1117/12.2552399

23 March 2020 Measurement of latent image in resist using scanning probe techniques

Luke T. Long, Andrew R. Neureuther, Patrick P. Naulleau

Proceedings Volume 11323, Extreme Ultraviolet (EUV) Lithography XI; 113231C (2020) https://doi.org/10.1117/12.2552399
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

The most pressing issue facing extreme ultraviolet lithography (EUV) as a multi-node technology is the inability to effectively manage stochastic effects. Fundamentally linked to the discrete nature of absorbed light (photons) and photo or electron-active components in the photoresist, stochastic effects lead to non-idealities in printed features, which for lines manifests itself as line edge and width roughness, and in the extreme cases, line breaks and bridges. However, measurement of stochastic propagation in photoresist has been hampered by the lack of metrology capable of probing the resist at intermediate stages of the patterning process. Here we present the use of atomic force microscopy (AFM) to measure the image in resist prior to photoresist development. In particular, the method was used to analyze the role of bake time on important resist metrics such as critical dimension, edge roughness, and roughness correlation length.

Conference Presentation

Citation Download Citation

Luke T. Long, Andrew R. Neureuther, and Patrick P. Naulleau "Measurement of latent image in resist using scanning probe techniques", Proc. SPIE 11323, Extreme Ultraviolet (EUV) Lithography XI, 113231C (23 March 2020); https://doi.org/10.1117/12.2552399

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