Presentation + Paper
22 February 2021 3D modeling of EUV photoresist using the multivariate Poisson propagation model
Luke Long, Andrew R. Neureuther, Patrick P. Naulleau
Author Affiliations +
Abstract
As target feature sizes for EUV lithography shrink, it is becoming ever more important to understand the intricate details of pattern formation in these materials. One such frontier that is garnering more attention is the role of the “third dimension" involved in the patterning process- the dimension perpendicular to the wafer. With resist thicknesses shrinking to accommodate ever narrower linewidths, small changes in resist performance in this dimension will have a greater overall effect on pattern quality, particularly as the thickness of these resists approaches target pattern dimensions. To understand the effect that the third dimension has on resist performance, and in particular the interplay between the third dimension and resist stochastics, we have developed a 3D version of the multivariate Poisson propagation model. As a test case for the model, we explore the role of acid diffusion in the so called third dimension on a set of 105 vias, showing that increased z blur yields an improvement in both dose to size and pattern uniformity without sacrificing resolution.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luke Long, Andrew R. Neureuther, and Patrick P. Naulleau "3D modeling of EUV photoresist using the multivariate Poisson propagation model", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116091C (22 February 2021); https://doi.org/10.1117/12.2589532
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KEYWORDS
3D modeling

Photoresist materials

Extreme ultraviolet lithography

Lithography

Photoresist developing

High volume manufacturing

Materials processing

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