Eelco van Setten,1 Jan Van Schoothttps://orcid.org/0000-0001-6643-7254,1 Anton van Oosten,1 Claire van Lare,1 Friso Wittebrood,1 Gijsbert Rispens,1 Gerardo Bottiglierihttps://orcid.org/0000-0001-5851-2445,1 John McNamara,1 Natalia Davydova,1 Jo Finders,1 Joerg Zimmermann,2 Bartosz Bilski,2 Paul Graeupner2
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
To enable cost-effective shrink of future devices, a new High-NA EUV platform is being developed. The High-NA EUV scanner employs a novel POB design concept with 0.55NA that enables 8nm HP resolution and a high throughput.
In this paper we will discuss the imaging performance and technology solutions to support our customers device roadmap from High-NA insertion towards low-k1 extension for critical Logic/MPU and DRAM layers. We will address various technology solutions that enable a high contrast through focus for decreasing feature size, such as mask stack optimization, computational litho solutions and advanced illumination shapes.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Eelco van Setten, Jan Van Schoot, Anton van Oosten, Claire van Lare, Friso Wittebrood, Gijsbert Rispens, Gerardo Bottiglieri, John McNamara, Natalia Davydova, Jo Finders, Joerg Zimmermann, Bartosz Bilski, Paul Graeupner, "High-NA EUV imaging: from system introduction towards low-k1 extension," Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540G (28 September 2021); https://doi.org/10.1117/12.2600965