Paper
14 September 1994 Yield enhancement through monitoring of real-time manufacturing processes
Neil Bryan Henis, Michael J. Satterfield, Edward O. Travis, Carol Gelatos
Author Affiliations +
Abstract
One of the major sources of particles today is from processing equipment. As die size continues to shrink, more effort needs to be placed in defect detection and elimination. A defect of 1 - 2 microns in size, while barely noticeable 5 years ago, can now destroy an entire die. Even with redundancy, a metal defect 1 micron in size will result in excess leakage due to an array short. While missing metal may be repairable, metal flakes from sputtering machines, for example, result in nonrepairable die. The objective of this paper is to show how backend defect reduction and yield enhancement can be improved with the use of the newer defect detection tools. We discuss three defect problems at different process levels which were discovered and eliminated with this work. The term `process induced defects per wafer pass' (PIDPWP) is demonstrated.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Neil Bryan Henis, Michael J. Satterfield, Edward O. Travis, and Carol Gelatos "Yield enhancement through monitoring of real-time manufacturing processes", Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); https://doi.org/10.1117/12.186739
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KEYWORDS
Semiconducting wafers

Etching

Particles

Metals

Defect detection

Manufacturing

Tungsten

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