Paper
25 August 2000 Control of internal stress in SMA/Si bimorph microactuators
Li Wang, Dong Xu, Bingchu Cai, Xiulan Cheng
Author Affiliations +
Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396451
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States
Abstract
The internal stress in SMA/Si bimorph structure was investigate din this paper. The shape memory alloy (SMA) thin films were sputter-deposited onto single crystal silicon substrates at room temperature and thin annealed at high temperature for crystallization. The internal stresses in SMA films before and after crystallization were measured by substrate-curvature method based on S. Timoshenko's theory. The results show that the internal stress changes from compressive to tensile after film crystallization. The intrinsic stress in the sputter-deposited SMA films is almost relaxed completely during the crystallization annealing and the internal stress in crystallized SMA film is dominated by thermal stress. By varying the sputtering power during deposition, the interface status and intrinsic stress can be controlled and excellent SMA/Si bimorph actuation structure can be obtained.
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Li Wang, Dong Xu, Bingchu Cai, and Xiulan Cheng "Control of internal stress in SMA/Si bimorph microactuators", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); https://doi.org/10.1117/12.396451
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Cited by 4 scholarly publications.
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KEYWORDS
Crystals

Shape memory alloys

Microactuators

Annealing

Interfaces

Silicon

Silicon films

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