Dr. Dongbo Xu Profile

Dr. Dongbo Xu

at Siemens

SPIE Involvement:

Author

Publications (24)

Proceedings Article | 28 April 2023 Presentation + Paper

Feasibility of logic metal scaling with 0.55NA EUV single patterning

Dongbo Xu, Ling Ee Tan, Vicky Philipsen, Joerg Zimmermann, Werner Gillijns

Proceedings Volume 12494, 124940M (2023) https://doi.org/10.1117/12.2657983

KEYWORDS: Source mask optimization, Metals, Extreme ultraviolet lithography, SRAF, Logic, Photomasks, Printing, Extreme ultraviolet

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Proceedings Article | 28 April 2023 Paper

EUV single patterning of random logic via using bright field mask

Ling Ee Tan, Werner Gillijns, Jae Uk Lee, Dongbo Xu, Jeroen van de Kerkhove, Vicky Philipsen, Ryoung-han Kim

Proceedings Volume 12494, 124940X (2023) https://doi.org/10.1117/12.2658344

KEYWORDS: Source mask optimization, Reticles, Resolution enhancement technologies, Extreme ultraviolet lithography, SRAF, Logic, Semiconducting wafers, Design and modelling, Critical dimension metrology, Optical proximity correction, Printing

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Proceedings Article | 28 April 2023 Presentation + Paper

EUV single patterning validation of curvilinear routing

Fergo Treska, Dongbo Xu, Yasser Sherazi, Werner Gillijns

Proceedings Volume 12494, 124940I (2023) https://doi.org/10.1117/12.2654633

KEYWORDS: Design and modelling, Extreme ultraviolet, Semiconducting wafers, Metals, Edge roughness, SRAF, Printing, Optical lithography, Scanning electron microscopy, Extreme ultraviolet lithography, Optical proximity correction

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SPIE Journal Paper | 25 November 2022

Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask

Dongbo Xu, Werner Gillijns, Ling Ee Tan, David Rio, Max Delorme, Vicky Philipsen, Ryoung-han Kim

JM3, Vol. 21, Issue 04, 043202, (November 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.043202

KEYWORDS: Photomasks, Design and modelling, Optical lithography, Metals, Binary data, SRAF, Critical dimension metrology, Extreme ultraviolet, Printing, Logic

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Proceedings Article | 15 September 2022 Presentation

The EUV mask exposed

Vicky Philipsen, Devesh Thakare, Dongbo Xu, Ling Ee Tan, Jetske Stortelder, Mike Cooke, Andy Goodyear, Victor Soltwisch, Qais Saadeh, Sascha Brose, Andreas Erdmann

Proceedings Volume PC12325, PC123250B (2022) https://doi.org/10.1117/12.2641306

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Proceedings Article | 26 May 2022 Presentation + Paper

Design and mask optimization toward low dose EUV exposure

Dongbo Xu, Werner Gillijns, Ryoung-han Kim

Proceedings Volume 12052, 120520C (2022) https://doi.org/10.1117/12.2614268

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Source mask optimization, Semiconducting wafers, Optical proximity correction, Nanoimprint lithography

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Proceedings Article | 26 May 2022 Presentation + Paper

Investigation of low-n mask in 0.33 NA EUV single patterning at pitch 28nm metal design

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Vicky Philipsen, Ryoung-Han Kim

Proceedings Volume 12051, 120510H (2022) https://doi.org/10.1117/12.2614197

KEYWORDS: Photomasks, SRAF, Nanoimprint lithography, Metals, Extreme ultraviolet

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Proceedings Article | 26 May 2022 Poster + Paper

EUV low-n attenuated phase-shift mask on random logic via single patterning at pitch 36nm

Ling Ee Tan, Werner Gillijns, Jae Uk Lee, Dongbo Xu, Jeroen van de Kerkhove, Vicky Philipsen, Ryoung-Han Kim

Proceedings Volume 12051, 120510P (2022) https://doi.org/10.1117/12.2614000

KEYWORDS: Photomasks, Optical proximity correction, SRAF, Logic, Nanoimprint lithography, Source mask optimization, Photovoltaics, Printing, Lens design, Semiconducting wafers

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SPIE Journal Paper | 7 April 2022

Exploration of alternative mask for 0.33NA extreme ultraviolet single patterning at pitch 28-nm metal design

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Vicky Philipsen, Ryoung-Han Kim

JM3, Vol. 21, Issue 02, 024401, (April 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.024401

KEYWORDS: Photomasks, SRAF, Optical lithography, Nanoimprint lithography, Extreme ultraviolet, Molybdenum, Binary data, Metals, Source mask optimization, Personal protective equipment

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Proceedings Article | 12 October 2021 Presentation + Paper

Exploration of alternative mask for 0.33NA EUV single patterning at pitch 28nm

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Vicky Philipsen, Ryoung-han Kim

Proceedings Volume 11854, 118540T (2021) https://doi.org/10.1117/12.2599054

KEYWORDS: SRAF, Photomasks, Optical lithography, Source mask optimization, Extreme ultraviolet, Logic

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Proceedings Article | 26 February 2021 Presentation + Paper

28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV lithography

D. De Simone, L. Kljucar, P. Das, R. Blanc, C. Beral, J. Severi, N. Vandenbroeck, P. Foubert, A. Charley, A. Oak, D. Xu, W. Gillijns, J. Mitard, Z. Tokei, M. van der Veen, N. Heylen, L. Teugels, Q. T. Le, F. Schleicher, P. Leray, K. Ronse, Il Hwan Kim, Insung Kim, Changmin Park, Jisun Lee, Koungmin Ryu, P. De Schepper, J. Doise, M. Kocsis

Proceedings Volume 11609, 116090Q (2021) https://doi.org/10.1117/12.2584713

KEYWORDS: Extreme ultraviolet lithography, Optical lithography, Oxides, Metals, Extreme ultraviolet, Scanners, Scanning electron microscopy, Photoresist processing, Lithography, Line edge roughness

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For many years traditional 193i lithography has been extended to the next technology node by means of multi-patterning techniques. However recently such a 193i technology became challenging and expensive to push beyond the technology node for complex features that can be tackled in a simpler manner by the Extreme UltraViolet Lithography (EUVL) technology. Nowadays, EUVL is part of the high-volume manufacturing device landscape and it has reached a critical decision point where one can push further the single print on 0.33NA full field scanner or move to a EUV double patterning technology with more relaxed pitches to overcome current 0.33NA stochastic limits. In this work we have selected the 28nm pitch dense line-space (P28) as critical decision check point. We have looked at the 0.33NA EUV single print because it is more cost effective than 0.33NA EUV double patterning. In addition, we have conducted a process feasibility study as P28 in single print is close to the resolution limit of the 0.33NA EUV full field scanner. We present the process results on 28nm dense line-space patterning by using Inpria’s metal-oxide (MOx) EUV resist. We discuss the lithographic and etching process challenges by looking at resist sensitivity, unbiased line edge roughness (LER) and nano patterning failures after etching (AE), using broad band plasma (BBP) and e-beam (EB) defectivity inspection tools. To get further understanding on the P28 single patterning capability we have integrated the developed EUV MOx process in a relevant iN7 technology test vehicle by developing a full P28 metallization module with ruthenium. In such a way we were able to carry on electrical tests on metallized serpentine, fork-fork and tip-to-tip structures designed with a purpose of enabling further learning on pattern failures through electrical measurements. Finally, we conclude by showing the readiness of P28 single exposure using Inpria’s MOx process on a 0.33NA EUV full field scanner.

Proceedings Article | 22 February 2021 Poster + Presentation + Paper

NXE:3400 OPC process monitoring: model validity vs process variability

Dongbo Xu, David Rio, Werner Gillijns, Max Delorme, Christina Baerts

Proceedings Volume 11609, 116091N (2021) https://doi.org/10.1117/12.2583870

KEYWORDS: Process modeling, OLE for process control, Optical proximity correction, SRAF, Semiconducting wafers, Scanners, Critical dimension metrology, Scanning electron microscopy, Process control, Finite element methods

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Proceedings Article | 22 February 2021 Presentation + Paper

EUV single patterning exploration for pitch 28 nm

Dongbo Xu, Werner Gillijns, Youssef Drissi, Ling Ee Tan, Apoorva Oak, Ryoung-han Kim

Proceedings Volume 11614, 116140Q (2021) https://doi.org/10.1117/12.2584730

KEYWORDS: Optical proximity correction, Semiconducting wafers, Metals, Extreme ultraviolet, SRAF, Lithography

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Proceedings Article | 25 March 2020 Presentation

Concurrent design rule, OPC and process optimization in EUV Lithography (Conference Presentation)

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Jae Uk Lee, Ryoung-Han Kim

Proceedings Volume 11328, 1132804 (2020) https://doi.org/10.1117/12.2553212

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SPIE Journal Paper | 1 August 2017

Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter, Eric Hendrickx

JM3, Vol. 16, Issue 04, 041002, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041002

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Proceedings Article | 24 March 2017 Paper

Reducing EUV mask 3D effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Eric Hendrickx, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter

Proceedings Volume 10143, 1014310 (2017) https://doi.org/10.1117/12.2257929

KEYWORDS: Extreme ultraviolet, Photomasks, Metals, Nickel, Lithography, Extreme ultraviolet lithography, Optical properties, X-ray diffraction, Etching, Cobalt, Refractive index

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SPIE Journal Paper | 19 January 2016

Extreme ultraviolet multilayer defect analysis and geometry reconstruction

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

JM3, Vol. 15, Issue 01, 014002, (January 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014002

KEYWORDS: Principal component analysis, Extreme ultraviolet, Photomasks, Databases, Zernike polynomials, Diffraction, Atrial fibrillation, Defect detection, Fourier transforms, Optical filters

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Proceedings Article | 23 September 2015 Paper

Application of Principal Component Analysis to EUV multilayer defect printing

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 9630, 96300Y (2015) https://doi.org/10.1117/12.2190784

KEYWORDS: Principal component analysis, Extreme ultraviolet, Photomasks, Neural networks, Databases, Printing, Zernike polynomials, Extreme ultraviolet lithography, Spherical lenses, EUV optics

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Proceedings Article | 16 March 2015 Paper

Application of the transport of intensity equation to EUV multilayer defect analysis

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 9422, 942218 (2015) https://doi.org/10.1117/12.2085468

KEYWORDS: Extreme ultraviolet, Photomasks, Fourier transforms, Neural networks, Phase retrieval, Printing, Lithography, Phase measurement, Optical properties, EUV optics

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SPIE Journal Paper | 11 June 2013

In situ aberration measurement technique based on an aerial image with an optimized source

Guanyong Yan, Xiangzhao Wang, Sikun Li, Jishuo Yang, Dongbo Xu, Lifeng Duan, Anatoly Bourov, Andreas Erdmann

OE, Vol. 52, Issue 06, 063602, (June 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.6.063602

KEYWORDS: In situ metrology, Image processing, Principal component analysis, Process modeling, Lithography, Matrices, Optical engineering, Image retrieval, Lithographic illumination, Zernike polynomials

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Proceedings Article | 22 May 2013 Paper

Defect parameters retrieval based on optical projection images

Dongbo Xu, Sikun Li, Xiangzhao Wang, Tim Fühner, Andreas Erdmann

Proceedings Volume 8789, 87890J (2013) https://doi.org/10.1117/12.2018210

KEYWORDS: Photomasks, 3D modeling, Defect detection, Lithography, Monochromatic aberrations, Projection systems, Integrated optics, Nanostructures, Lithographic illumination, Optics manufacturing

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SPIE Journal Paper | 7 May 2013

High-order aberration measurement technique based on a quadratic Zernike model with optimized source

Jishuo Yang, Xiangzhao Wang, Sikun Li, Lifeng Duan, Guanyong Yan, Dongbo Xu, Anatoly Bourov, Andreas Erdmann

OE, Vol. 52, Issue 05, 053603, (May 2013) https://doi.org/10.1117/12.10.1117/1.OE.52.5.053603

KEYWORDS: Photomasks, Lithography, Artificial intelligence, Principal component analysis, Optical engineering, Process modeling, Wavefront aberrations, Monochromatic aberrations, Instrument modeling, Mechanics

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Proceedings Article | 18 December 2012 Paper

In situ aberration measurement technique based on aerial image with optimized source

Guanyong Yan, Xiangzhao Wang, Sikun Li, Jishuo Yang, Dongbo Xu, Lifeng Duan, Anatoly Bourov, Andreas Erdmann

Proceedings Volume 8550, 85503N (2012) https://doi.org/10.1117/12.981334

KEYWORDS: Matrices, Lithographic illumination, Lithography, Image processing, Principal component analysis, Process modeling, Statistical analysis, Error analysis, Artificial intelligence, Imaging systems

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Proceedings Article | 18 December 2012 Paper

In situ aberration measurement technique based on quadratic Zernike model

Jishuo Yang, Xiangzhao Wang, Sikun Li, Lifeng Duan, Guanyong Yan, Dongbo Xu, Anatoly Bourov, Andreas Erdmann

Proceedings Volume 8550, 85503O (2012) https://doi.org/10.1117/12.981328

KEYWORDS: Lithography, Principal component analysis, Wavefront aberrations, In situ metrology, Semiconducting wafers, Image processing, Photomasks, Computer simulations, Metrology, Artificial intelligence

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Showing 5 of 24 publications

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