Resists for sub-100nm patterning at 193nm exposure

N. D. Jarnagin; K. E. Gonsalves; M. X. Wang; J. M. Roberts; W. Yeuh

doi:10.1117/12.656457

29 March 2006 Resists for sub-100nm patterning at 193nm exposure

N. D. Jarnagin, K. E. Gonsalves, M. X. Wang, J. M. Roberts, W. Yeuh

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61534P (2006) https://doi.org/10.1117/12.656457
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Current resist materials suffer from a number of problems which must be addressed to allow continued scaling of memory and logic devices. The incompatibility of the photoacid generator (PAG) and the polymer matrix is addressed in this study. This incompatibility leads to lowered acid generation efficiency, non-uniform acid distribution and migration, and phase separation. These issues ultimately lead to undesirable, premature and non-uniform deprotection reactions in the chemically amplified resist. To alleviate these problems, it is proposed that PAG units be incorporated in the resist chain to make a one-component resist, rather than blending monomeric PAG with the resist polymer. Also, polymer bound PAG resists exhibit higher stability, lower outgassing, and lower line edge roughness (LER) than corresponding resists. The polymer bound PAG resists, poly (γ-butyrolactone methacrylate-co-2-ethyl-2-adamantyl methacrylate-co-PAG), were synthesized using free radical polymerization. PAG incorporated resists, as well as PAG blended resists were exposed using the 193 nm ASML 5500/9xx optical lithography system, with 0.63 NA. Exposed wafers were evaluated using SEM. The triflate PAG incorporated resists provided 110 nm (220 nm pitch) line space features, and 80 nm isolated features. The PAG blended resists provided 130 nm (260 nm pitch) line space features. The associated photospeed for the 110 nm line space features was 8.2 mJ/cm², which is within road map standards.

Citation Download Citation

N. D. Jarnagin, K. E. Gonsalves, M. X. Wang, J. M. Roberts, and W. Yeuh "Resists for sub-100nm patterning at 193nm exposure", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61534P (29 March 2006); https://doi.org/10.1117/12.656457

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available