Device metrology with high-performance scanning ion beams

David C. Joy; Brendan J. Griffin; John Notte; Lewis Stern; Shawn McVey; Bill Ward; Clarke Fenner

doi:10.1117/12.710926

5 April 2007 Device metrology with high-performance scanning ion beams

David C. Joy, Brendan J. Griffin, John Notte, Lewis Stern, Shawn McVey, Bill Ward, Clarke Fenner

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65181I (2007) https://doi.org/10.1117/12.710926
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

A scanning ion microscope (SIM) is analogous to a scanning electron microscope (SEM) but utilizes a beam of helium ions, with energy of 10 to 25 keV , instead of electrons. The SIM potentially offers several advantages for device critical dimension metrology as compared to the more familiar CD-SEM. These include a high brightness source which is sub-nanometer in size, an enhanced secondary electron yield, restricted beam penetration, and superior image contrast and information content. Possible problems include pervasive positive charging, ion implantation, and a lack of detailed experimental and theoretical knowledge about low energy ion interactions with solids. Comparison of line profiles across structures made by electron induced and ion induced secondary electrons show that there are some significant differences between them which arise from the different modes of interaction in the two cases. As a result the algorithms employed for line width determination will require revision in order to produce data which is consistent with CD-SEM data.

Citation Download Citation

David C. Joy, Brendan J. Griffin, John Notte, Lewis Stern, Shawn McVey, Bill Ward, and Clarke Fenner "Device metrology with high-performance scanning ion beams", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181I (5 April 2007); https://doi.org/10.1117/12.710926

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