Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling

Chih-I Wei; Seulki Kang; Sayantan Das; Masahiro Oya; Yosuke Okamoto; Kotaro Maruyama; Germain Fenger; Azat Latypov; Ir Kusnadi; Gurdaman Khaira; Yuichiro Yamazaki; Werner Gillijns; Sandip Halder; Gian Lorusso

doi:10.1117/1.JMM.22.4.041603

19 October 2023 Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling

Chih-I Wei, Seulki Kang, Sayantan Das, Masahiro Oya, Yosuke Okamoto, Kotaro Maruyama, Germain Fenger, Azat Latypov, Ir Kusnadi, Gurdaman Khaira, Yuichiro Yamazaki, Werner Gillijns, Sandip Halder, Gian Lorusso

Author Affiliations +

Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 22, Issue 4, 041603 (October 2023). https://doi.org/10.1117/1.JMM.22.4.041603

Abstract

Background

For complex two-dimensional (2D) patterns, optical proximity correction (OPC) model calibration flows cannot always satisfy accuracy requirements with the standard cutline-based input data. Utilizing after-development inspection e-beam metrology image contours, better model predictions of 2D shapes and wafer hotspots can be realized.

Aim

We compare model accuracy performance of conventional cutline-based and contour-based OPC models on the regular and hotspots patterns.

Approach

By utilizing image contours that are directly extracted from large field of view (LFoV) e-beam metrology, OPC models were calibrated and verified with both cutline-based and contour-based modeling flows. We also used a wafer sampling plan that contained bridging hotspots. Using that sampling plan, a hotspot-aware three-dimentional resist (R3D) compact model was created.

Results

First, a contour-based OPC model was generated with <1 nm root mean square error of contour sites. Compared with cutline-based models, it shows better predictions on 2D feature corners. Second, when combined with a hotspot sampling plan, a hotspot-aware compact model could be generated. The accuracy of hotspot predictions on false positives and false negatives was reduced to around 1% with this approach.

Conclusions

OPC model calibration and verification with LFoV image contours provide improved predictions on corner rounding shapes and great potential to increase design space coverage. We also observed improved accuracy of hotspot predictions when using an update hotspot aware model when comparing with that of the OPC model. Furthermore, the combination of R3D and stochastic compact models also demonstrated great potential on predictions of rare wafer failure events.

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Chih-I Wei, Seulki Kang, Sayantan Das, Masahiro Oya, Yosuke Okamoto, Kotaro Maruyama, Germain Fenger, Azat Latypov, Ir Kusnadi, Gurdaman Khaira, Yuichiro Yamazaki, Werner Gillijns, Sandip Halder, and Gian Lorusso "Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling," Journal of Micro/Nanopatterning, Materials, and Metrology 22(4), 041603 (19 October 2023). https://doi.org/10.1117/1.JMM.22.4.041603

Received: 27 January 2023; Accepted: 4 August 2023; Published: 19 October 2023

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KEYWORDS

Modeling

Data modeling

Semiconducting wafers

Optical proximity correction

Contour modeling

Calibration

Metrology

Background

Aim

Approach

Results

Conclusions

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