In lithography, peeling and collapse of photoresist patterns cause difficulties of micro fabrication. In order to prevent the destructions, enhancement of adhesion between the photoresist and substrate is effective. Therefore, significance of accurate adhesion analysis increases with miniaturization of device process. The destructions of photoresist/substrate interface can be mainly categorized into interfacial and cohesive failures. In this study, we propose the direct analysis of adhesion in nanoscale area. Using AFM, we estimate adhesion energy of AFM-tip/Si interface in local area and identify the destruction mode of photoresist/Si interface. First, we evaluates the adhesion between photoresist films and surface modified Si substrates. From the surface free energy analysis, the threshold adhesion work, 𝑊𝐴𝑡ℎ (J/m2) of photoresist/Si interface is estimated to be 71.7 mJ/m2 in order to identify the destruction mode in macro area. Secondary, the interaction between the AFM tip and the surface modified Si substrates are evaluated in the local area less than 10 nm in diameter. The interaction energy, 𝐸𝐼 (J) of AFM-tip/Si interface shows a positive correlation with the adhesion work of photoresist/Si interface. We estimate effective area for adhesion of AFM-tip/Si and adhesion energy, 𝐸𝐴 (J/m2) of AFM-tip/Si in nanoscale area. The results predict that only interfacial destruction occurs at photoresist/Si interface when the adhesion energy of AFM-tip/Si is less than 44.7 mJ/m2. We can expect that the quantitative analysis of nanoscale adhesion contribute to improve the accuracy of nanolithography process.
The dissolution behavior of a photoresist film is analyzed by a confocal laser scanning microscope (CLSM) in this work. Results show that the existence of a local condensation of a TMAH developer at the interface of the photoresist/glass substrate interface at the initial stage of the photoresist dissolution. The uniformity of the local condensation of the TMAH developer depends on the amount of a remaining solvent in the photoresist film. Moreover, results indicate that the uniform/ununiform penetration path results in the uniform/ununiform local condensation of the TMAH developer. Importantly, the ununiform penetration path and local condensation cause the excessive contacting duration at the edge of an unexposed region of the photoresist which causes to form the photoresist pattern edge roughness. The uniformity of the penetration path of the TMAH developer is critical for the photoresist pattern edge roughness.
Various sizes of concave square patterns are used for micro bubble adhesion and removal investigation in a
water/methanol mixture solution. As decreasing the surface energy of the solution, the micro bubble is more likely to
remove from the square patterns. However, the micro bubble is less likely to remove as decreasing the square size of
patterns. The threshold concentration of water/methanol solution for bubble removal can be determined. Based on the
surface energy analysis, the adhesion and removal mechanisms of micro bubble can be explained. By applying
alternating electric field to an isolated bubble, electric decomposition of water occurred at the electrode surface. The
possibility of removal control of micro bubble is discussed.
Relaxation properties of dielectric dipoles such as dielectric frequency dispersion, relaxation time, which should be
optimized in structural material designing, are characterized. Relaxation times of dielectric dipoles of photo resist
materials are characterized by Cole-Cole plot, which is employed to determine a dielectric relaxation time of dipole
moment in polymer structure, based on traditional capacitance method in frequency range of 10mHz to 5MHz. The
relaxation time of dry film resist (DFR) can be determined to be 12.1s. The validity of dielectric properties of DFR film
as a structural material is discussed.
Deformation and stress distribution of ultra thin resist pattern are estimated by finite element method (FEM) from the
measurement values of van der Waals (vdW) force and mechanical properties of resist material. In this simulation, strain
and stress distribution in the simple model of the resist pattern are obtained. These results show that the thin resist pattern
has high sensitivity to weak vdW force. And, the stress concentrates at an interface between the resist pattern and the
substrate. The stress concentration point in the resist pattern would be destructed due to the weak force. In the experiment,
the vdW attractive force is measured with an atomic force microscope (AFM) system. The maximum value of the
attractive force is about 180nN. The error of the force measurement is prevented to be lower because the no torsion of the
cantilever can be observed when the tip is approaching to the thin film resist surface. It is possible to discuss the
realization of a soft micro chamber wall made of a soft material such as the cell.
KEYWORDS: Electrodes, Gold, Glasses, Control systems, Agriculture, Motion controllers, Chemical analysis, Photography, Electrical engineering, Chemical elements
Micro bubbles in several tens micrometer diameter can act as effective structural elements of micro devices. In this
study, the micro device employing the bubble motion is characterized. It has been experimentally revealed that bubble
motion in micro channel is trapped at the channel branches. The local electrodes are set at a part of micro channel in
order to control the bubble motion. Negatively charged bubble surface is received a certain force due to Coulomb's
effect. This study will provide effective information to bioscience, medical science and agriculture engineering.
MEMS (Micro Electro Mechanical systems) technology has been widely employed for micro device fabrication.
Polymer materials, such as photoresist resin, have been focused as permanent structural materials used for MEMS. It is
required that the permanent structural materials are durable to employ to micro device component. We demonstrate that
the mechanical strength of self-standing resist film is enhanced by forming hexagonal hole array. The destruction
strength of the resist film is analyzed by peel destruction test. As a result, the enhancement of the self-standing resist film
with patterning can be obtained.
We have tried to control water pH by a micro pH control system. We fabricate the micro chip system for pH control
constructed with a photoresist channel and integrated electrodes. In this system, the micro channels are set onto the
electrodes and electrical field is applied to the electrodes. As a result, the pH of de-ionized (DI) water is can be changed
from 7.0 to 7.4. In a macro system using a glass beaker and Al electrodes, the water pH can be changed from 7.3 to 8.6.
We believe that this study can contribute to bio-electronics, medical and agriculture fields.
The micro bubbles condense in the concave channel and are trapped at the channel corner. In the experiments, the deionized (DI) water is dropped on a dry film resist (DFR) pattern. In the result, the micro bubble condensed and trapped at the different position in various shape patterns. The removal of micro bubbles adhered on a resist pattern has been recognized as one important factor in micro device manufacturing. We explained the condensation behavior of the micro bubble based on thermodynamics. The force acting on the bubble is estimated based on the force balance model between buoyancy and line tension. We can control and predict the micro bubble condensation by designing micro pattern arrangement.
Recently, pattern collapse is becoming one of the critical issues in semiconductor manufacturing and many works have been done to solve this issue1) 2). Since pattern collapse occurs when outer force onto the resist pattern such as surface tension, impact of rinse solution, etc. surpasses the resistance of the resist pattern such as mechanical strength, adhesion force between resist and substrate, it is considered effective for improvement of pattern collapse to control resist film properties by track process, i.e., optimization of the mechanical properties of the resist film and enhancement of the adhesion force between resist and substrate3) -5). In this study, we focused on the mechanical strength of the resist film and examined how post applied bake (PAB) condition affects the pattern collapse behavior. From ellipsometry measurement, it was found that increasing PAB time and temperature resulted in thickness reduction and refractive index increase, which suggested that the density of the resist film became high. Then we analyzed the mechanical strength of the resist film with the tip indentation method using atomic force microscope. It was found that the hardness of the resist film was affected by PAB conditions and regardless of PAB condition, hardened layer existed beneath the film surface. Finally, we carried out the measurements of loads to collapse 180nm resist dot patterns using the direct peeling with atomic force microscope tip (DPAT) method. Loads ranged from 600 to 2000nN overall and essentially increased as seen for indentation measurements when PAB temperature or time was increased, except some critical conditions. Through these evaluations using AFM, we succeeded in quantitatively evaluate the mechanical properties of the resist films processed with various PAB conditions. It was found that PAB condition obviously impacts on the hardness of the resist film and it is closely related to pattern collapse load.
In immersion lithography technique, some defects such as a watermark and a nanoscale bubble have been focused as the serious problems to be solved. In order to clarify the formation mechanism of the watermark, the in-situ observation of the drying behavior of the water drop containing the particles and without the particles, are conducted on the Si substrates. In the static watermark formation on the flat substrate, we can classify the watermark formation processes based on the watermark shapes. From the surface energy balance analysis, the particles dispersed in the DI-water adhere on the Si substrate. In addition, from the Laplace force balance, the particles adhered on the Si substrate will attract the surrounding particles. Hence, we can clarify the formation mechanism of the static watermark condensed in the ring shape. Meanwhile, in the dynamic watermark formation, we can observe clearly the condensed watermark is formed on the Si substrate and the particles move to lower region in inclined drop. In actual immersion lithography system, we can discuss the particles are more likely to remain in the immersion liquid under the lens system.
It is necessary to develop a nano-bubble detector similar as a conventional particle counter for reducing micro and nano defects caused by nano-bubble (NB) in immersion lithography. In this regard, we discuss adhesion and removal mechanisms of NB adhered on a resist surface for immersion lithography. The micro and nano bubbles are more likely to adhere to the micro defect on the resist surface and lens surface. Keeping cleanness of lens and resist surface is necessary in order to prevent the micro bubble adhesion. We employed the AFM (Atomic Force Microscope) for the observation of NBs on a Si substrate and a resist surface. The diameter and height of NBs observed are approximately 40~100nm and 3~8nm, respectively. By approaching the AFM tip onto the NBs, the repulsive force can be detected but the attractive force on the resist surface. The interaction analysis between the AFM tip and the ArF excimer resist surface is effective in order to identify the NBs and to distinguish from solid particles. These phenomena can be discussed on the basis of Lifshitz theory. The separation procedure of the NB is accomplished with the AFM tip. The applying load at which the NB can be separated into the minute one is approximately 5nN. In addition, by the thermodynamic analysis, it can be considered that the NB adhered on the resist surface tends to be a flat shape and spread on the resist surface. It is difficult to adhere the bubbles on the resist surface.
Adhesion property of resist is characterized with DPAT (direct peeling with atomic force microscope (AFM) tip) method using 193 nm resist patterns of 180 nm dot shape which were developed for various developing time between 12 and 120 seconds in order to analyze the phenomenon which the short develop time process had led to suppress the pattern collapse. Surface free energy and refractive index of resist film treated with the developing time were also investigated from a thermodynamic point of view. The balance model among surface energy was adopted for analyzing intrusion phenomenon of developer solution into the resist-substrate interface. It can be explained quantitatively that the intrusion energy of developer solution acts to weaken the adhesion strength of resist pattern to the substrate. Furthermore, the intrusion energy became larger with increasing developing time. Analysis with the DPAT method indicates that the pattern collapse occurs accompanied with interface and cohesion destruction. Interface-scientifically speaking, the short develop time process proved to be effective to suppress the pattern collapse because of higher adhesion energy of the resist pattern to the substrate in shorter developing time.
Mechanical strength of resist film processed by various post apply bake (PAB) conditions were measured utilizing the tip indentation method using atomic force microscope (AFM). With the tip indentation method, we could quantify mechanical strength of resist film in terms of “degree of softening.” It was found that PAB at our standard baking temperature tends to lead to softening of the resist film which is considered due to existence of softening point of the resist polymer. Also changing baking time at this temperature showed very complicated softness behavior. By control of baking temperature, we could obtain harder resist film as baking time becomes longer. Further analysis of these resist film properties by ellipsometry suggested that changes in mechanical strength occur by the evaporation of the resist solvent and/or structure changes inside the resist film, depending upon baking conditions.
Various sizes of concave square patterns are used for microscale bubble adhesion and removal investigation in a water/methanol mixture solution. As decreasing the surface energy of the solution, the micro bubbles are more likely to remove from the square patterns. However, the micro bubble is less likely to remove as decreasing the square size of patterns. The threshold concentration of water/methanol solution for bubble removal can be determined experimentally. Based on the surface energy analysis, the adhesion and removal mechanisms of micro bubble can be explained. The nanoscale bubbles adhered on an ArF excimer resist surface can be observed clearly by using atomic force microscope (AFM). The growth of bubbles on the ArF excimer resist surface can be imaged. By the AFM technique, nanoscale bubble can be divided into some minute bubbles on the ArF resist surface under applying certain force about 5nN. The condensation nature of nanoscale bubbles is discussed.
KEYWORDS: Liquids, Atomic force microscopy, Interfaces, Finite element methods, Atomic force microscope, Scanning electron microscopy, Photography, Chemical elements, Reliability, Stress analysis
By applying load directly with a micro cantilever tip, a resist micro pattern can be collapsed easily. The load when pattern collapse occurred decreases with increasing line width of resist pattern. Micro resist pattern adhering on a substrate is analyzed directly and quantitatively by using atomic force microscopy (AFM) tip. The collapse properties of KrF resist line patterns ranging from 170 to 730 nm in width were investigated for line width dependency. The load for pattern collapse decreases as narrowing of pattern width, however, it decreases considerably when the line width is approximately 400nm. BY combining with analysis of internal stress distribution by finite element method, line width dependency of resist pattern destruction can be clarified. The i-line resist patterns of 610nm dot shape were investigated for the environmental dependency of pattern collapse. In deionized (DI)-water, the load for pattern collapse is approximately one-thirtieth as large as that in dry air. The balance model among surface energy can be adopted for analyzing intrusion phenomenon of DI-water into resist/substrate interface. It can be explained quantitatively that the intrusion of DI-water acts to weaken the adhesion strength of resist micro pattern to the substrate. The validity and reliability of this technique are discussed.
Measurement precision, especially the measurement offset of an automatic overlay measurement technique, was studied for application to sub-half micron device manufacturing. Experimental data showed that the measurement offset depended on the cross-section structure rather than the reflectivity or the roughness of the overlay marks. Dependence of the measurement offset upon equipment factors such as the incident angle of illumination was also studied. This paper also shows measurement offsets on critical levels of the sub-half micron device manufacturing.
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