HVPE growth of orientation patterned GaAsP (OP-GaAsP) layers with thickness exceeding 600 m and with excellent domain fidelity is accomplished for several arsenic-phosphorus compositions to obtain desired optical properties. This novel ternary material system could be an ideal candidate as compared to those of widely explored QPM materials – GaAs and GaP, for nonlinear frequency conversion in the mid- and long-wave infrared based on some specific pump sources, such as mode-locked Er-fiber lasers. Recent demonstration of second harmonic generation in an OP-GaAs0.15P0.85 structure brings us a step closer to implement such GaAsP QPM structures as frequency conversion devices.
Combining materials (through heteroepitaxy or forming ternaries), growth techniques, and template preparation approaches helps in resolving current limitations in developing frequency conversion sources in the MLWIR. In this study we focus on heteroepitaxy of GaAsP ternaries with different composition on close matching substrates and on orientation-patterned templates. The results are layers with excellent crystalline quality and quasi-phase matching structures with also excellent domain fidelity. Simplifying the existing template preparation techniques and improving the growth on them, and developing new ones for preparation of orientation-patterned templates on common substrates such as Si is another direction along with efforts to prove SHG and QPM frequency conversion in the grown materials.
Thick growth of a ternary nonlinear optical material GaAsxP1-x by HVPE is accomplished to demonstrate nonlinear frequency conversion in the mid and longwave infrared. The nonlinear optical properties of the ternary material are ideal compared to those of widely explored QPM materials – GaAs and GaP – for frequency conversion. Here, we present the HVPE growth results of 500 µm or thicker GaAsxP1-x ternary layers with different arsenic composition. A full suite of optical characterization of GaAsP layers grown on both plain substrates and on orientation patterned templates is presented to demonstrate the suitability of this novel optical material for frequency conversion.
We present GaAsxP1-x as an attractive ternary material that combines the properties of GaAs and GaP for nonlinear optical applications as it combines the higher nonlinear susceptibility of GaAs with the lower 2PA of GaP for a given x-composition. We discuss the HVPE growth results of GaAsP on plain substrates and on orientation patterned (OP) templates fabricated by the conventional MBE assisted polarity inversion technique with and without the MBE regrowth step. Along with the growth results showing in excess of 500 µm thick growth, we also present the structural and optical properties of the ternary material.
We discuss low-pressure HVPE growth of ZnSe on GaAs substrates (~350 µm thick) and on OP-GaAs templates (~115 µm thick) that achieved single-crystalline quality ZnSe layers which will be used to develop OP-ZnSe QPM structures for nonlinear frequency conversion devices. Material characterization techniques including SEM, HR-XRD, XTEM, and PL have been used to verify that the ZnSe grown by HVPE has a superior quality to the commercially available ZnSe substrates. Current focus is to obtain thicknesses beyond 500 µm using plain and OP templates for frequency conversion in the MLWIR.
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