Mr. Evgeny Malankin Profile

Evgeny Malankin

at Siemens EDA

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Publications (3)

Proceedings Article | 28 April 2023 Paper

Patterning assessment using 0.33NA EUV single mask for next generation DRAM manufacturing

Jeonghoon Lee, Sandip Halder, Van Tuong Pham, Roberto Fallica, Seonggil Heo, Kaushik Sah, Hyo Seon Suh, Victor Blanco, Werner Gillijns, Andrew Cross, Ethan Maguire, Ana-Maria Armeanu, Vladislav Liubich, Evgeny Malankin, Xima Zhang, Monica Kempsell Sears, Neal Lafferty, Germain Fenger, Chih-I Wei, Ryoung Han Kim

Proceedings Volume 12495, 124950S (2023) https://doi.org/10.1117/12.2660763

KEYWORDS: Optical lithography, Extreme ultraviolet, Optical proximity correction, Design and modelling, SRAF, Semiconducting wafers, Inspection, Source mask optimization, Printing, Electronic design automation

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Proceedings Article | 28 April 2023 Presentation + Paper

Application of resolution enhancement techniques at high NA EUV for next generation DRAM patterning

Ana-Maria Armeanu, Evgeny Malankin, Neal Lafferty, Chih-I Wei, Monica Kempsell Sears, Germain Fenger, Xima Zhang, Werner Gillijns, Darko Trivkovic, Ryoung-han Kim, Jeonghoon Lee

Proceedings Volume 12495, 124950A (2023) https://doi.org/10.1117/12.2660413

KEYWORDS: Photomasks, Extreme ultraviolet, Source mask optimization, Resolution enhancement technologies, Optical proximity correction, Lithography, Optical lithography, Capacitors, Semiconducting wafers, SRAF

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Among several critical layers of DRAM (dynamic random-access memory), capacitor holes of honeycomb arrays and bit-line-periphery (BLP) with Storage Node Landing Pad (SNLP) are the most critical layers in terms of patterning difficulty level. The honeycomb array hole layer has the highest density among various hole array types, and it is a complex lithography step since this layer is key in determining the performance of the DRAM. BLP with SNLP includes hole type and bi-directional line/space (L/S) design, and industry is considering a single exposure solution, compared to a three-mask solution using ArF immersion [1]. This BLP layer of 10nm DRAM has 2 different types of pattern topologies, hole array and bi-direction line/space: it is a very challenging single exposure level. In this paper, we discuss patterning challenges that come as consequences of industry trends in DRAM cell size reduction [2,3]. To keep up with this trend and to propose a single mask solution for bit-line-periphery, storage node landing pads and aggressive cell array pitches are considered along with resolution enhancement techniques (RET) for high-NA anamorphic EUV (NA=0.55) lithography. This study uses computational lithography such as source mask optimization (SMO) to find optimal off-axis illumination and optimal placement of sub-resolution assist features (SRAF) on the mask whilst considering the manufacturing rules checks (MRC constraints) for anamorphic EUV masks. In order to achieve that, a screening Design Technology Co-optimization (DTCO) experiment is done. The purpose is to identify cell array pitches in between 24nm and 32nm which satisfy both scaling requirements and patterning fidelity, preferred orientation of layout, and mask biasing scheme for various cell arrays. Lithography metrics like common depth of focus (cDoF), exposure latitude (EL), image contrast, and image log slope (ILS) are used to decide what is optimal way to expose on wafer. For the sake of completeness of the study, mask materials are compared. Indeed, in EUV domain there is interest to use alternative mask absorbers like Ruthenium alloys as an alternative to Tantalum-based absorbers [4,5,6].

Proceedings Article | 26 May 2022 Presentation + Paper

Spectrum optimization during SMO: simultaneous source-mask-laser spectrum optimization

Evgeny Malankin, Neal Lafferty, Mikhail Silakov, Ekaterina Semenova, Takamitsu Komaki, Kouichi Fujii, Taisuke Miura, Gouta Niimi, Taku Yamazaki

Proceedings Volume 12052, 1205205 (2022) https://doi.org/10.1117/12.2614055

KEYWORDS: Source mask optimization, Electroluminescence, Metals, Photomasks, Light sources, Logic, SRAF, Lithography, Chromatic aberrations, Excimer lasers

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Tuning the spectrum of a scanner’s excimer laser light source is a well-known technique to achieve improved depth of focus (DOF) for an exposure. Previous studies have focused on the imaging improvement capabilities of readily available spectral shapes such as Gaussian E95 single peak width, as well as dual-peak spectral shapes where the spacing of the peaks can be varied. It is commonly known that adjustments in the laser spectrum must be carefully considered since exposure latitude (EL) can also be reduced as DOF is increased. By carefully engineering the laser’s spectrum, DOF can be maximized with very little impact to exposure latitude. Undesirable speckle contrast can also be reduced as laser bandwidth is increased. Traditionally, these approaches have been used to improve DOF of thick resist applications such as CMOS image sensors. Other areas such as NAND Flash have introduced laser spectrum engineering (SE) to compensate for topography effects between periphery and array regions. Recently, advances in laser hardware have enabled new and unique spectral shapes to be used for imaging. In this paper, we explore the various spectral profiles possible on the latest Gigaphoton GT66A ArFi light sources. New applications of these spectrum shapes are considered for foundry logic-type levels. First, a representative 14nm-node logic layer is considered. Source Mask Optimization (SMO) is performed while various widths of spectral profiles are used as input, such as traditional E95 Gaussian profiles, dual-peak, and flat top. By accounting for the laser spectrum during SMO, common DOF can be improved by ≥ 20% without a noticeable decrease in exposure latitude. The SMO sources and optimized masks are also different from each other and the nominal cases, depending on the spectral distribution used. Next, we explore simultaneously optimizing the laser spectrum, source, and mask in an experimental SMO+SE. Spectra can be constrained to keep symmetric profiles about the 193nm center point. Improved lithographic performance can result from the application of programmable laser spectra combined with pixelated sources and inverse lithography (ILT).

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