Dr. Jacque Georger Profile

Dr. Jacque Georger

at SUNY Poly SEMATECH

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Author

Publications (10)

Proceedings Article | 7 April 2011 Paper

Line width roughness control and pattern collapse solutions for EUV patterning

Karen Petrillo, George Huang, Dominic Ashworth, Jacque Georger, Liping Ren, K. Y. Cho, Warren Montgomery, Stefan Wurm, Shinichiro Kawakami, Shannon Dunn, Akiteryu Ko

Proceedings Volume 7969, 796913 (2011) https://doi.org/10.1117/12.879513

KEYWORDS: Line width roughness, Extreme ultraviolet, Extreme ultraviolet lithography, Etching, Photoresist processing, Image processing, Semiconducting wafers, Optical lithography, Critical dimension metrology, Scanning electron microscopy

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Proceedings Article | 18 March 2010 Paper

Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Chawon Koh, Jacque Georger, Liping Ren, George Huang, Frank Goodwin, Stefan Wurm, Dominic Ashworth, Warren Montgomery, Bill Pierson, Joo-on Park, Patrick Naulleau

Proceedings Volume 7636, 763604 (2010) https://doi.org/10.1117/12.846629

KEYWORDS: Optical lithography, Extreme ultraviolet, Manufacturing, Line width roughness, Polymers, Etching, Extreme ultraviolet lithography, Resistance, Glasses, Photoresist processing

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Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. We characterized EUVL readiness of the three major resist platforms for sub-30 nm half-pitch (HP) manufacturability using a full-field ASML alpha demo tool (ADT) scanner and studied the extendibility of EUV chemically amplified resist (CAR). Based on an "M-factor" analysis, which shows the maturity of EUV resist for 28 nm HP manufacturability, a polymer-bound photoacid generator (PAG) resist was 78% ready, a PHS hybrid resist was 81%, and a molecular glass EUV resist was 58%. The polymer-bound resist showed good resolution for 25 nm HP using the ASML ADT. It also demonstrated fair linewidth roughness (LWR) and a good lithographic process margin of 18% exposure latitude (EL) and 160 nm depth of field (DOF) for 28 nm HP patterning compared with the other resist platforms, but its resist collapse and etch resistance need to be improved for manufacturability. PHS hybrid resist showed a fair etch resistance and resist collapse performance compared to the other resist platforms, but LWR needs to be improved. The molecular resist needs to mature further, especially in resist collapse and iso-dense (ID) bias. When considering its many strong points and control of lower acid diffusion, the polymer-bound PAG resist appears to be the most suitable platform for manufacturability and EUV CAR extension. We therefore would like to encourage the development of next generation polymer-bound PAG resist with a higher etch resistance. A process window of 80 nm DOF was demonstrated for 26 nm HP patterning and a measurable DOF for 25 nm HP was achieved with the polymer-bound PAG resist. Resist collapse and LWR are major issues for 22 nm HP patterning in manufacturing. LWR improvements were achieved with various techniques, and resist collapse was greatly improved with a novel approach that uses a residual resist layer. 16 nm HP line/space (L/S) image modulation and 18 nm HP resolution were demonstrated with an EUV CAR, indicating that EUV CAR could be extended to sub-20 nm HP patterning.

Proceedings Article | 18 March 2009 Paper

RLS tradeoff vs. quantum yield of high PAG EUV resists

Craig Higgins, Alin Antohe, Greg Denbeaux, Seth Kruger, Jacque Georger, Robert Brainard

Proceedings Volume 7271, 727147 (2009) https://doi.org/10.1117/12.814307

KEYWORDS: Quantum efficiency, Extreme ultraviolet, Line edge roughness, Extreme ultraviolet lithography, Absorbance, Semiconducting wafers, Absorption, Diffusion, Photons, Photoresist materials

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Proceedings Article | 18 March 2009 Paper

Assessment of EUV resist readiness for 32-nm hp manufacturing and extendibility study of EUV ADT using state-of-the-art resist

Chawon Koh, Liping Ren, Jacque Georger, Frank Goodwin, Stefan Wurm, Bill Pierson, Joo-On Park, Tom Wallow, Todd Younkin, Patrick Naulleau

Proceedings Volume 7271, 727124 (2009) https://doi.org/10.1117/12.814314

KEYWORDS: Semiconducting wafers, Manufacturing, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Photoresist processing, Optical lithography, Photomasks, Electroluminescence, Critical dimension metrology

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Proceedings Article | 24 August 2001 Paper

Development of DUV resists for zero angle and angled implant applications

Patricia Fallon, Michael Cronin, Joseph Lachowski, Pasquale Valerio, Larry Bachetti, Jacque Georger, Mike Mori, David Tomes, Kim Wynja

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436893

KEYWORDS: Deep ultraviolet, Lithography, Photoresist materials, Image processing, Photomasks, Silicon, Reflectivity, Photoresist developing, Ions, Photoresist processing

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Proceedings Article | 11 June 1999 Paper

Improved resolution with advanced negative DUV photoresist with 0.26N capability

Gregory Prokopowicz, Jacque Georger, Eyad Ayyash, James Thackeray, William Brunsvold, Laura Kosbar, Ali Afzali-Kushaa, Jeffrey Gelorme

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350181

KEYWORDS: Deep ultraviolet, Lithography, Phase shifts, Bridges, Polymers, Photoresist materials, Manufacturing, Signal to noise ratio, Reticles, Temperature metrology

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Proceedings Article | 29 June 1998 Paper

Development of DUV resist formulations with excellent performance on metal substrates

Martha Rajaratnam, James Cameron, Jacque Georger, Doris Kang, Gregory Prokopowicz, Roger Sinta, James Thackeray

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312468

KEYWORDS: Tin, Polymers, Etching, Metals, Deep ultraviolet, Resistance, Interfaces, Chemical analysis, Lithography, Photoresist materials

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Proceedings Article | 7 July 1997 Paper

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, William Brunsvold, Fred Buehrer, Ronald DellaGuardia, David Dobuzinsky, Timothy Farrell, Hok Ho, Ahmad Katnani, Robin Keller, James Marsh, Paul Muller, Ronald Nunes, Hung Ng, James Oberschmidt, Michael Pike, Deborah Ryan, Tina Cotler-Wagner, Ron Schulz, Hiroshi Ito, Donald Hofer, Gregory Breyta, Debra Fenzel-Alexander, Gregory Wallraff, Juliann Opitz, James Thackeray, George Barclay, James Cameron, Tracy Lindsay, Michael Cronin, Matthew Moynihan, Sassan Nour, Jacque Georger, Mike Mori, Peter Hagerty, Roger Sinta, Thomas Zydowsky

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275830

KEYWORDS: Semiconducting wafers, Photoresist materials, Etching, Polymers, Resistance, Lithography, Silicon, Glasses, Annealing, Photoresist processing

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Proceedings Article | 16 May 1994 Paper

Investigation of onium salt type photoacid generators in positive DUV resist systems

Michael Cronin, Timothy Adams, Theodore Fedynyshyn, Jacque Georger, J. Michael Mori, Roger Sinta, James Thackeray

Proceedings Volume 2195, (1994) https://doi.org/10.1117/12.175339

KEYWORDS: Diffusion, Deep ultraviolet, Lithography, Polymers, Matrices, Semiconducting wafers, Chemistry, Picosecond phenomena, Information operations, Manufacturing

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Proceedings Article | 15 September 1993 Paper

193 nm lithography with ultrathin surface imaging resist systems

Charles Dulcey, Tim Koloski, Walter Dressick, Mu-San Chen, Jacque Georger, Jeffrey Calvert

Proceedings Volume 1925, (1993) https://doi.org/10.1117/12.154800

KEYWORDS: Metals, Optical lithography, Imaging systems, Chemistry, Etching, Absorbance, Photomasks, Palladium, Lithography, Deep ultraviolet

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Showing 5 of 10 publications

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