For the past few decades, PPA (performance, power, and area) demand of computation infrastructure has been driving exponential increase of chip density. In recent years, the challenges of printability and process window for advanced manufacturing node continuously motivated innovations in reticle enhancement techniques, notably the adoption of inverse lithography technology (ILT) and curvilinear mask. We have observed a few challenges: 1) ILT provides unmatched quality of results but does incur additional computation time to manage; 2) for curvilinear mask, though the benefits are evident, the associated data volume is very large; and 3) mask consistency remains a critical component for design manufacturability. To utilize the advanced RET techniques to their full potential, it is crucial to identify the repeating structures in design layout and reuse the correction result, getting three benefits at the same time: reducing mask preparation runtime, reducing mask data volume, and improving mask consistency. Conventional layout repetition analysis is based on native design hierarchy. However, in many cases, the input layout for mask synthesis flows is either completely stripped of hierarchy or contains sub-optimal hierarchy. Some layout hierarchy can be detected and reconstructed using manual methods such as using user generated pattern library of highly repeating structures in conjunction with pattern matching technology. However, the preparation of such libraries is a formidable effort, and a significant number of repetitions in designs will be overlooked by this approach. In this paper, we investigate the automatic detection of repeating geometry structures and formed a hierarchy that is optimized for mask synthesis. The detection supports any process layer and both Manhattan and all-angle designs. The engine detects repeating regions of arbitrary shape. The detected repeating structures can also be applied within the chip or across chips to accelerate correction to further improve mask consistency. By scaling well to hundreds of processors, the distributed hierarchy extraction is very efficient for a full chip layout. For highly repetitive layouts, mask synthesis runtime reduction of more than an order of magnitude has been observed by performing this hierarchy extraction.
To successfully transfer design patterns to wafer, it is essential to calibrate different types of models to describe the optical, physical, and chemical effects in chip manufacturing process. In recent years, there have also been active investigations of machine learning (ML) models to capture various aspects of semiconductor processes. As it is well known, model training time and model accuracy are heavily influenced by the input data. It is becoming increasingly important to provide highly efficient methods to automatically generate effective pattern samples from full chip designs. A straightforward approach, simple random sampling, can be highly efficient to generate effective samples for a homogeneous population. However, real world chip layouts are characterized by geometrical and lithographical feature distributions that vary significantly across the full chip design space. The complexity of the problem necessitates the adoption of a comprehensive set of approaches for sampling as well as flexibility in customizing the sampling strategy for various applications. In this paper, we investigate automatic layout sampling to optimize the coverage and diversity of patterns given the need for minimizing training sample size or other constraints, and therefore adopting various unsupervised learning techniques. The flow scales very well with computation resources to efficiently process full chip layouts. A simple, standard interface is provided for typical usage, but flexible programming APIs are available to customize the sampling strategy for advanced applications. Results demonstrate that the samples generated by this flow have increased diversity, which leads to significantly reduced model training time with comparable or increased model accuracy.
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