Dr. Rand Cottle Profile

Dr. Rand Cottle

Manager of Metrology

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Author

Publications (18)

Proceedings Article | 21 June 2006 Paper

Manufacturability and printability of AAPSM with transparent etch stop layer

Michael Cangemi, Vicky Philipsen, Rudi De Ruyter, Leonardus Leunissen, Nicolo Morgana, Pierre Sixt, Marc Cangemi, Rand Cottle, Bryan Kasprowicz

Proceedings Volume 6281, 62810T (2006) https://doi.org/10.1117/12.692803

KEYWORDS: Etching, Quartz, Photomasks, Semiconducting wafers, Polarization, Manufacturing, Chromium, Reticles, Lithography, Phase shifts

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Phase-shift mask (PSM) technology in combination with 193nm illumination remains a viable option for high contrast imaging towards 45nm half-pitch applications. The advent of hyper NA (immersion) lithography increases the imaging sensitivity towards the photomask properties, such as mask-induced polarization. In addition, the use of PSM technology implies taking into account the inherent photomask topography effects for a balanced through pitch imaging. A good quartz etch depth control of +/-1^o through pitch is required for optimized wafer imaging [1]. Therefore, a new PSM material stack was proposed based on a transparent etch stop layer (TESL) in order to meet the stringent phase depth requirements beyond 65nm half-pitch [2]. This extra layer allows over-etching of the quartz, resulting in a good etch depth linearity and uniformity. This study examines the manufacturability and printability of TESL-based masks. We examine the effect of an improved quartz etch depth linearity on the through-pitch process windows for a TESL-based alternating aperture (AA)PSM. Moreover, due to the different stack of photomask material compared to a classical photomask blank, the impact on printability is investigated by simulations, AIMS and wafer imaging. The image imbalance compensation by trench biasing needs to be optimized for through-pitch process windows. The actual depth and line width of the structures is systematically probed within the photomask field. Based on photomask metrology data, rigorous electro-magnetic field simulations are compared to wafer prints, obtained on an ASML XT1250Di ArF immersion scanner working with a 0.85NA projection lens and to AIMS results from Zeiss AIMS fab 193i. Furthermore, feature sizes on the order of the lithography wavelength induce photomask polarization effects in the imaging path [3]. The degree of polarization is compared to the polarization behavior of a conventional PSM. In summary, this study assesses the capability of TESL PSM towards the 65nm node through-pitch imaging.

Proceedings Article | 19 May 2006 Paper

Mask repair technique assessment and development for the 45nm lithographic node

H. Marchman, D. Taylor, S. Hadisutjipto, S. Mackay, R. Cottle, J. Maltabes, J. Brown

Proceedings Volume 6283, 628311 (2006) https://doi.org/10.1117/12.681862

KEYWORDS: Photomasks, Ions, Etching, Ion beams, Lithography, Molecules, Electron beams, Image resolution, Scanning electron microscopy, Signal to noise ratio

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Proceedings Article | 21 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 615411 (2006) https://doi.org/10.1117/12.659353

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 15 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 61541D (2006) https://doi.org/10.1117/12.659390

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 9 November 2005 Paper

A films based approach to intensity imbalance correction for 65nm node c:PSM

Rand Cottle, Pierre Sixt, Matt Lassiter, Marc Cangemi, Patrick Martin, Chris Progler

Proceedings Volume 5992, 59920J (2005) https://doi.org/10.1117/12.632214

KEYWORDS: Etching, Photomasks, Reticles, Manufacturing, Wet etching, Silica, Lithography, Resolution enhancement technologies, Scattering, Chromium

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Proceedings Article | 9 November 2005 Paper

An integrated approach to the analysis of imprint vs. optical lithography, or why this is not just a mask discussion

John Maltabes, R. Scott Mackay, Rand Cottle

Proceedings Volume 5992, 59924A (2005) https://doi.org/10.1117/12.632207

KEYWORDS: Lithography, Photomasks, Manufacturing, Semiconductors, Reticles, Etching, Optical lithography, Semiconducting wafers, Nanoimprint lithography, Inspection

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Proceedings Article | 18 August 2005 Paper

Current imprint template commercial manufacturing capability for nanotechnology and existing semiconductor and MEMS markets

John Maltabes, Scott Mackay, Rand Cottle

Proceedings Volume 5931, 59311H (2005) https://doi.org/10.1117/12.629499

KEYWORDS: Lithography, Manufacturing, Semiconductors, Photomasks, Etching, Reticles, Microelectromechanical systems, Optical lithography, Optics manufacturing, Nanotechnology

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Proceedings Article | 28 June 2005 Paper

Validation of Nu-Flare e-beam emulation software in a simulation environment

Daniel Ritter, Peter Brooker, John Lewellen, Young-Mog Ham, Patrick Martin, Rand Cottle

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617060

KEYWORDS: Photomasks, Electrons, Reticles, Cadmium, Computer simulations, Mask making, Inspection, Optical proximity correction, Backscatter, Monte Carlo methods

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Proceedings Article | 28 June 2005 Paper

Interaction and balance of mask write time and design RET strategies

Yuan Zhang, Rick Gray, O. Nakagawa, Puneet Gupta, Henry Kamberian, Guangming Xiao, Rand Cottle, Chris Progler

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617146

KEYWORDS: Molybdenum, Source mask optimization, Computed tomography, Photomasks, Resolution enhancement technologies, Design for manufacturing, Optical proximity correction, Error analysis, Statistical analysis, Lithography

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Proceedings Article | 12 May 2005 Paper

Tunable transmission phase mask options for 65/45nm node gate and contact processing

Bryan Kasprowicz, Will Conley, Young-Mog Ham, Michael Cangemi, Nicolo Morgana, Marc Cangemi, Rand Cottle, Christopher Progler, Wei Wu, Lloyd Litt, Jonathan Cobb, Bernie Roman

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601011

KEYWORDS: Photomasks, Manufacturing, Etching, Plasma etching, Lithography, Chromium, Phase shifts, Reticles, Semiconducting wafers, Sputter deposition

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Proceedings Article | 12 May 2005 Paper

The effect of polarized 193nm irradiation on photomask haze formation

Y. Kim, H. Kang, Yuan Zhang, Chuong Tran, Nigel Farrar, Jennifer Qin, Barry Rockwell, H. Cho, Rand Cottle, David Chan, Pat Martin, S. Choi, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.598913

KEYWORDS: Photomasks, Air contamination, Pellicles, Laser irradiation, Ions, Pulsed laser operation, Chromium, Chromatography, Inspection, Laser scanners

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Proceedings Article | 12 May 2005 Paper

Investigation of viable approaches to AAPSM intensity imbalance reduction for 65nm lithography

Tejas Jhaveri, Rand Cottle, Yuan Zhang, Christopher Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.593219

KEYWORDS: Manufacturing, Photomasks, Electroluminescence, Etching, Critical dimension metrology, Lithography, Standards development, Phase shifts, Scanning electron microscopy, Optics manufacturing

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Proceedings Article | 12 May 2005 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Mike Cangemi, Bryan Kasprowicz, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Mark Smith, Wei Wu, Jonathan Cobb, Rusty Carter, Young-mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601584

KEYWORDS: Photomasks, Image processing, Manufacturing, Image transmission, Lithography, Photoresist materials, Nanoimprint lithography, Image resolution, Semiconductors, 193nm lithography

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Proceedings Article | 5 May 2005 Paper

Mask cost analysis via write time estimation

Yuan Zhang, Rick Gray, Seurien Chou, Barry Rockwell, Guangming Xiao, Henry Kamberian, Rand Cottle, Alex Wolleben, Chris Progler

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.598884

KEYWORDS: Data modeling, Optical proximity correction, Photomasks, Computed tomography, Manufacturing, Statistical analysis, Statistical modeling, Resolution enhancement technologies, Error analysis, Inspection

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Proceedings Article | 27 January 2005 Paper

Photomask development for 90-nm technology

Yuan Zhang, Rand Cottle, Scott Mackay, Guangming Xiao, James Unruh, Christopher Progler

Proceedings Volume 5645, (2005) https://doi.org/10.1117/12.570482

KEYWORDS: Photomasks, Manufacturing, Lithography, Chromium, Binary data, Quartz, Semiconductors, Phase shifts, SRAF, Etching

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Proceedings Article | 2 June 2003 Paper

Rotation-induced measurement error by a CD-SEM

Tejas Jhaveri, Rand Cottle

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485030

KEYWORDS: Scanning electron microscopy, Critical dimension metrology, Data modeling, Metrology, Semiconductors, Calibration, Manufacturing, Optical alignment, Photomasks, Lithography

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Proceedings Article | 11 March 2002 Paper

Tip shape effects in scanning probe metrology

Rand Cottle

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458297

KEYWORDS: Scanning probe microscopy, Quartz, Metrology, Reticles, Critical dimension metrology, Atomic force microscopy, Scanning probe metrology, Semiconducting wafers, Scanning electron microscopy, Silicon

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Proceedings Article | 5 September 2001 Paper

New optical metrology for masks: range and accuracy rivals SEM

Rand Cottle, Peter Fiekowsky, C. Hung, Sheng-che Lin

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438380

KEYWORDS: Scanning electron microscopy, Photomasks, Metrology, Optical testing, Deep ultraviolet, Semiconducting wafers, Wafer-level optics, Optics manufacturing, Calibration, Optical metrology

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Showing 5 of 18 publications

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