Guaranteeing high signal-to-noise ratio and good optical performance over time of Ge-based photodetectors (PD) is challenging. Encompassing both measurement methodology and understanding the physics of failure. In this paper, we highlight recent developments in this field. Methodology-wise, we present a lifetime-assessment for package-level qualification as well as a wafer-level qualification test, including stress and relaxation study of the degradation. Regarding physics-of-failure, we propose a methodology to differentiate dark current degradation originating from the Ge-bulk, the Ge/SiO2 interface and the Ge/Si interface.
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