Dr. Thomas H. Newman Profile

Dr. Thomas H. Newman

Sr. Product Marketing Manager

SPIE Involvement:

Author

Area of Expertise:

Product Management , Key Account Manager , Product Marketing , Lithography

Websites:

Company Website

Proceedings Article | 1 November 2007 Paper

Evaluation of attenuated PSM photomask blanks with TF11 chrome and FEP-171 resist on a 248 nm DUV laser pattern generator

Kezhao Xing, Charles Björnborg, Henrik Karlsson, Adisa Paulsson, Anna Rosendahl, Peter Beiming, Jukka Vedenpää, Jonathan Walford, Tom Newman

Proceedings Volume 6730, 67303Z (2007) https://doi.org/10.1117/12.746855

KEYWORDS: Photomasks, Lithography, Electron beam lithography, Deep ultraviolet, Etching, Reflectivity, Binary data, Standards development, Image resolution, Photoresist processing

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Tighter requirements on mask resolution, CD and image positioning accuracy at and beyond the 45 nm technology node push the development of improved photomask blanks. One such blank for attenuated phase-shift masks (att-PSM) provides a thinner chrome film, named TF11, with higher chrome etch rate compared to the previous generation Att- PSM blank (NTAR5 chrome film) from the same supplier. Reduced stress in the chrome film also results in less image placement error induced by the material. FEP-171 is the positive chemically amplified resist (PCAR) that is most commonly used in advanced mask manufacturing with both 50 keV variable shaped e-beam (VSB) and DUV laser pattern generators. TF11 allows an FEP-171 resist film down to about 2000 Å thickness with sufficient etch resistance, while the standard resist thickness for NTAR5 is around 3000 Å. This work has experimentally evaluated the use of TF11 chrome and FEP-171 resist together with a 248 nm DUV laser pattern generator, the Sigma7500. First, patterning performance in resist with thicknesses from 2000 Å to 2600 Å, in steps of 100 Å, was tested with respect to swing curve and basic lithographic parameters including resolution, CD linearity, CD iso-dense bias and dose sensitivity. Patterning results on mask showed a swing minimum at around 2200 Å and a swing maximum at around 2500 Å, which correspond to reflectivity measurements for 248 nm wavelength performed by the blank supplier. It was concluded that the overall patterning performance was best close to the swing maximum. Thereafter the patterning performance using TF11 at two resist thicknesses, 2000 Å and 2550 Å, was studied in more detail and compared to performance using NTAR5 with 3200 Å resist. The evaluation showed that the Sigma7500-II offers good compatibility with TF11, especially using the optimized FEP-171 resist thickness of 2550 Å. It also showed that the patterning capability of the Sigma7500-II using TF11 and 2550 Å resist is improved compared to using NTAR5 and 3200 Å resist.

Proceedings Article | 30 October 2007 Paper

Improving the CD linearity and proximity performance of photomasks written on the Sigma7500-II DUV laser writer through embedded OPC

Anders Österberg, Lars Ivansen, Angela Beyerl, Tom Newman, Amanda Bowhill, Emile Sahouria, Steffen Schulze

Proceedings Volume 6730, 673034 (2007) https://doi.org/10.1117/12.747074

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Calibration, Deep ultraviolet, Spatial light modulators, Lithography, Systems modeling, Model-based design, Acquisition tracking and pointing

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Proceedings Article | 11 May 2007 Paper

Embedded optical proximity correction for the Sigma7500 DUV mask writer

Anders Österberg, Lars Ivansen, Henrik Åhlfeldt, Hans Fosshaug, Tom Newman, Amanda Bowhill, Emile Sahouria, Steffen Schulze

Proceedings Volume 6607, 660704 (2007) https://doi.org/10.1117/12.728918

KEYWORDS: Photomasks, Optical proximity correction, Calibration, Semiconducting wafers, Deep ultraviolet, Systems modeling, Spatial light modulators, Matrices, Model-based design, Lithography

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Proceedings Article | 3 May 2007 Paper

Improved CD uniformity for advanced masks using the Sigma7500 pattern generator and ProcessEqualizer

Robert Eklund, Anders Österberg, Jonas Hellgren, Hans Fosshaug, Tord Karlin, Tom Newman

Proceedings Volume 6533, 65330C (2007) https://doi.org/10.1117/12.736923

KEYWORDS: Photomasks, Critical dimension metrology, Spatial light modulators, Convolution, Raster graphics, Neodymium, Electron beam lithography, Data modeling, Deep ultraviolet, Printing

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Proceedings Article | 20 May 2006 Paper

Sigma7500: an improved DUV laser pattern generator addressing sub-100-nm photomask accuracy and productivity requirements

Henrik Sjöberg, Tord Karlin, Mats Rosling, Thomas Öström, Jonas Måhlén, Tom Newman

Proceedings Volume 6283, 628305 (2006) https://doi.org/10.1117/12.681731

KEYWORDS: Photomasks, Spatial light modulators, Neodymium, Image enhancement, Calibration, Deep ultraviolet, Optical lithography, Raster graphics, CCD cameras, Phase shifting

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Proceedings Article | 28 June 2005 Paper

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

Mahesh Chandramouli, Bob Olshausen, Yulia Korobko, Sven Henrichs, Ping Qu, Jian Ma, Bruce Auches, Damon Cole, Thomas Ostrom, Angela Beyerl, Robert Eklund, Raoul Zerne, Peter Goransson, Magnus Persson, Tom Newman

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617359

KEYWORDS: Neodymium, Photomasks, Spatial light modulators, Deep ultraviolet, Electron beam lithography, Optical alignment, Quartz, Optical lithography, Chromium, Critical dimension metrology

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Proceedings Article | 16 June 2005 Paper

Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

Thomas Ostrom, Angela Beyerl, Henrik Sjoberg, Tom Newman, Peter Hogfeldt

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637276

KEYWORDS: Photomasks, Optical alignment, Deep ultraviolet, Spatial light modulators, Electron beam lithography, Optical lithography, Overlay metrology, Charge-coupled devices, Quartz, CCD cameras

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Proceedings Article | 27 December 2002 Paper

Raster-shaped beam pattern generation for 70-nm photomask production

Thomas Newman, Ira Finklestein, Huei-Mei Kao, Sriram Krishnaswami, Darryn Long, Richard Lozes, Henry Pearce-Percy, Allan Sagle, Jeffrey Varner, Stacey Winter, Mark Gesley, Frank Abboud

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468198

KEYWORDS: Photomasks, Beam shaping, Optical proximity correction, Raster graphics, Modulation, Electron beam lithography, Optical lithography, Chemically amplified resists, Calibration, Lithography

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Proceedings Article | 1 August 2002 Paper

Raster scan patterning solution for 100- and 70-nm OPC masks

Frank Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon Cole, Robert Dean, Mark Gesley, Herb Gillman, William Moore, Mark Mueller, Robert Naber, Thomas Newman, Romin Puri, Frederick Raymond, Mario Rougieri

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476923

KEYWORDS: Photomasks, Raster graphics, Optical proximity correction, Etching, Control systems, Point spread functions, Optical lithography, Electron beam lithography, Lithography, Edge roughness

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Proceedings Article | 30 July 2002 Paper

Evaluation of OPC mask printing with a raster scan pattern generator

Thomas Newman, Jan Chabala, B.J. Marleau, Frederick Raymond, Olivier Toublan, Mark Gesley, Frank Abboud

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474514

KEYWORDS: Raster graphics, Photomasks, Optical proximity correction, Point spread functions, Convolution, Model-based design, Printing, Electron beam lithography, Image resolution, Lithography

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Proceedings Article | 11 March 2002 Paper

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology

Frank Abboud, Ki-Ho Baik, Varoujan Chakarian, Damon Cole, Jay Daniel, Robert Dean, Mark Gesley, Robert Naber, Thomas Newman, Frederick Raymond, David Trost, Mark Wiltse, William DeVore

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.491928

KEYWORDS: Photomasks, Optical proximity correction, Raster graphics, Optical lithography, Electron beam lithography, Edge roughness, Lithography, Model-based design, Point spread functions, Photoresist processing

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Proceedings Article | 5 September 2001 Paper

High-productivity mask writer with broad operating range

Ki-Ho Baik, Varoujan Chakarian, Bob Dean, Maiying Lu, Robert Naber, Thomas Newman, Mark Wiltse, Frank Abboud

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438401

KEYWORDS: Photomasks, Raster graphics, Photoresist processing, Optical proximity correction, Chemically amplified resists, Optical lithography, RGB color model, Lithography, Semiconductors, Critical dimension metrology

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Proceedings Article | 30 December 1999 Paper

Effects of mask error factor on process window capability

Dan Schurz, Warren Flack, Simon Cohen, Thomas Newman, Khiem Nguyen

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373317

KEYWORDS: Critical dimension metrology, Reticles, Cadmium, Photomasks, Semiconducting wafers, Photoresist materials, Lithography, Computer aided design, Tolerancing, Scanning electron microscopy

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Proceedings Article | 17 May 1994 Paper

Quantitative stepper metrology using the focus monitor test mask

Timothy Brunner, Alexander Martin, Ronald Martino, Christopher Ausschnitt, Thomas Newman, Michael Hibbs

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175449

KEYWORDS: Semiconducting wafers, Overlay metrology, Monochromatic aberrations, Photomasks, Metrology, Phase shifts, Lithography, Calibration, Image processing, Data acquisition

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Proceedings Article | 17 May 1994 Paper

Comprehensive evaluation of major phase-shift mask technologies for isolated gate structures in logic designs

Lars Liebmann, Thomas Newman, Richard Ferguson, Ronald Martino, Antoinette Molless, Mark Neisser, J. Tracy Weed

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175455

KEYWORDS: Computer aided design, Photomasks, Lithography, Logic, Phase shifts, Semiconducting wafers, Manufacturing, Phase shifting, Tolerancing, Deep ultraviolet

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Showing 5 of 15 publications

Conference Committee Involvement (10)

SPIE Photomask Technology

10 September 2013 | Monterey, California, United States

Photomask Technology

11 September 2012 | Monterey, California, United States

Photomask Technology

19 September 2011 | Monterey, California, United States

Photomask Technology

13 September 2010 | Monterey, California, United States

Photomask Technology

15 September 2009 | Monterey, California, United States

Showing 5 of 10 Conference Committees

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