Mr. Thomas Schmöller Profile

Thomas Schmöller

Manager/Application Engineering at Synopsys GmbH

SPIE Involvement:

Author

Publications (37)

Proceedings Article | 24 March 2017 Presentation + Paper

Resist 3D aware mask solution with ILT for hotspot repair

Kosta Selinidis, Wolfgang Hoppe, Thomas Schmoeller, Thuc Dam, Kevin Hooker, Guangming Xiao

Proceedings Volume 10147, 101470Q (2017) https://doi.org/10.1117/12.2257962

KEYWORDS: 3D modeling, Optical proximity correction, Optical lithography, Data modeling, Computational lithography, Optimization (mathematics), Photoresist processing, Source mask optimization, Scanning electron microscopy

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SPIE Journal Paper | 19 February 2016

^{Rigorous assessment of patterning solution of metal layer in 7 nm technology node}

Weimin Gao, Ivan Ciofi, Yves Saad, Philippe Matagne, Michael Bachmann, Werner Gillijns, Kevin Lucas, Wolfgang Demmerle, Thomas Schmöller

JM3, Vol. 15, Issue 01, 013505, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.013505

KEYWORDS: Optical lithography, Etching, Extreme ultraviolet lithography, Metals, Lithography, Critical dimension metrology, 3D modeling, Stochastic processes, Cadmium, Extreme ultraviolet

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Proceedings Article | 19 March 2015 Paper

Experimental validation of stochastic modeling for negative-tone develop EUV resists

Itaru Kamohara, Weimin Gao, Ulrich Klostermann, Thomas Schmöller, Wolfgang Demmerle, Kevin Lucas, Danilo De Simone, Eric Hendrickx, Geert Vandenberghe

Proceedings Volume 9422, 942223 (2015) https://doi.org/10.1117/12.2085506

KEYWORDS: Line width roughness, Stochastic processes, Calibration, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Data modeling, Scanning electron microscopy, Photoresist processing, Photomasks

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Proceedings Article | 18 March 2015 Paper

Patterning process exploration of metal 1 layer in 7nm node with 3D patterning flow simulations

Weimin Gao, Ivan Ciofi, Yves Saad, Philippe Matagne, Michael Bachmann, Mohamed Oulmane, Werner Gillijns, Kevin Lucas, Wolfgang Demmerle, Thomas Schmoeller

Proceedings Volume 9426, 942606 (2015) https://doi.org/10.1117/12.2085328

KEYWORDS: Etching, Optical lithography, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, 3D modeling, Metals, Stochastic processes, Cadmium, 3D vision

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Proceedings Article | 31 March 2014 Paper

Improving 3D resist profile compact modeling by exploiting 3D resist physical mechanisms

Yongfa Fan, Cheng-En Wu, Qian Ren, Hua Song, Thomas Schmoeller

Proceedings Volume 9052, 90520X (2014) https://doi.org/10.1117/12.2048999

KEYWORDS: 3D modeling, Diffusion, Calibration, Data modeling, Lithography, Photoresist processing, Optical proximity correction, Etching, Lithographic illumination, Semiconducting wafers

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3D Resist profile aware OPC has becoming increasingly important to address hot spots generated at etch processes due to the mass occurrence of non-ideal resist profile in 28nm technology node and beyond. It is therefore critical to build compact models capable of 3D simulation for OPC applications. A straightforward and simple approach is to build individual 2D models at different image depths either based on actual wafer measurement data or virtual simulation data from rigorous lithography simulators. Individual models at interested heights can be used by downstream OPC/LRC tools to account for 3D resist profile effects. However, the relevant image depths need be predetermined due to the discontinuous nature of the methodology itself. Furthermore, the physical commonality among the individual 2D models may deviate from each other as well during the separate calibration processes. To overcome the drawbacks, efforts are made in this paper to compute the whole bulk image using Hopkins equation in one shot. The bulk image is then used to build 3D resist models. This approach also opens the feasibility of including resist interface effects (for example, top or bottom out-diffusion), which are important to resist profile formation, into a compact 3D resist model. The interface effects calculations are merged into the bulk image Hopkins equation. Simulation experiments are conducted to demonstrate that resist profile heavily rely on interface conditions. Our experimental results show that those interface effects can be accurately simulated with reference to rigorous simulation results. In modeling reality, such a 3D resist model can be calibrated with data from discrete image planes but can be used at arbitrary interpolated planes. One obvious advantage of this 3D resist model approach is that the 3D model is more physically represented by a common set of resist parameters (in contrast to the individual model approach) for 3D resist profile simulation. A full model calibration test is conducted on a virtual lithography process. It is demonstrated that 3D resist profile of the process can be precisely captured by this method. It is shown that the resist model can be carried to a different lithography process with same resist setup but a different illumination source without model any accuracy degradation. In an additional test, the model is used to demonstrate the capability of resist 3D profile correction by ILT.

Proceedings Article | 31 March 2014 Paper

Experimental validation of rigorous, 3D profile models for negative-tone develop resists

Weimin Gao, Ulrich Klostermann, Itaru Kamohara, Thomas Schmoeller, Kevin Lucas, Wolfgang Demmerle, Peter De Bisschop, Julien Mailfert

Proceedings Volume 9052, 90520C (2014) https://doi.org/10.1117/12.2046522

KEYWORDS: 3D modeling, Etching, Atrial fibrillation, Scanning electron microscopy, Semiconducting wafers, Photoresist processing, Data modeling, Calibration, Optical proximity correction, Optical lithography

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Proceedings Article | 31 March 2014 Paper

Combining lithography and etch models in OPC modeling

Lena Zavyalova, Lan Luan, Hua Song, Thomas Schmoeller, James Shiely

Proceedings Volume 9052, 905222 (2014) https://doi.org/10.1117/12.2049003

KEYWORDS: Etching, 3D modeling, Optical proximity correction, Lithography, Calibration, Data modeling, Semiconducting wafers, Photomasks, Photoresist processing, Integrated modeling

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Proceedings Article | 28 March 2014 Paper

Layout optimization of DRAM cells using rigorous simulation model for NTD

Jinhyuck Jeon, Shinyoung Kim, Chanha Park, Hyunjo Yang, Donggyu Yim, Bernd Kuechler, Rainer Zimmermann, Thomas Muelders, Ulrich Klostermann, Thomas Schmoeller, Mun-hoe Do, Jung-Hoe Choi

Proceedings Volume 9053, 90530J (2014) https://doi.org/10.1117/12.2046541

KEYWORDS: Photomasks, Optical proximity correction, SRAF, Printing, Semiconducting wafers, 3D modeling, Calibration, Optimization (mathematics), Source mask optimization, Manufacturing

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DRAM chip space is mainly determined by the size of the memory cell array patterns which consist of periodic memory cell features and edges of the periodic array. Resolution Enhancement Techniques (RET) are used to optimize the periodic pattern process performance. Computational Lithography such as source mask optimization (SMO) to find the optimal off axis illumination and optical proximity correction (OPC) combined with model based SRAF placement are applied to print patterns on target. For 20nm Memory Cell optimization we see challenges that demand additional tool competence for layout optimization. The first challenge is a memory core pattern of brick-wall type with a k1 of 0.28, so it allows only two spectral beams to interfere. We will show how to analytically derive the only valid geometrically limited source. Another consequence of two-beam interference limitation is a ”super stable” core pattern, with the advantage of high depth of focus (DoF) but also low sensitivity to proximity corrections or changes of contact aspect ratio. This makes an array edge correction very difficult. The edge can be the most critical pattern since it forms the transition from the very stable regime of periodic patterns to non-periodic periphery, so it combines the most critical pitch and highest susceptibility to defocus. Above challenge makes the layout correction to a complex optimization task demanding a layout optimization that finds a solution with optimal process stability taking into account DoF, exposure dose latitude (EL), mask error enhancement factor (MEEF) and mask manufacturability constraints. This can only be achieved by simultaneously considering all criteria while placing and sizing SRAFs and main mask features. The second challenge is the use of a negative tone development (NTD) type resist, which has a strong resist effect and is difficult to characterize experimentally due to negative resist profile taper angles that perturb CD at bottom characterization by scanning electron microscope (SEM) measurements. High resist impact and difficult model data acquisition demand for a simulation model that hat is capable of extrapolating reliably beyond its calibration dataset. We use rigorous simulation models to provide that predictive performance. We have discussed the need of a rigorous mask optimization process for DRAM contact cell layout yielding mask layouts that are optimal in process performance, mask manufacturability and accuracy. In this paper, we have shown the step by step process from analytical illumination source derivation, a NTD and application tailored model calibration to layout optimization such as OPC and SRAF placement. Finally the work has been verified with simulation and experimental results on wafer.

Proceedings Article | 12 April 2013 Paper

3D resist profile modeling for OPC applications

Yongfa Fan, Kar Kit Koh, Qing Yang, Wolfgang Hoppe, Bernd Kuechler, Puvan Perampalam, Makoto Miyagi, Lena Zavyalova, Thomas Schmoeller

Proceedings Volume 8683, 868318 (2013) https://doi.org/10.1117/12.2011852

KEYWORDS: 3D modeling, Data modeling, Etching, Optical proximity correction, Calibration, Lithography, Scanning electron microscopy, 3D image processing, Semiconducting wafers, Statistical modeling

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Proceedings Article | 8 April 2011 Paper

Shadowing effect modeling and compensation for EUV lithography

Hua Song, Lena Zavyalova, Irene Su, James Shiely, Thomas Schmoeller

Proceedings Volume 7969, 79691O (2011) https://doi.org/10.1117/12.881713

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Reticles, Optical lithography, Lithography, Critical dimension metrology, Calibration, Semiconducting wafers, Cadmium

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SPIE Journal Paper | 1 April 2011

Split, overlap, stitching, and process design for double patterning considering local reflectivity variation by using rigorous three-dimensional wafer-topography and lithography simulation

Itaru Kamohara, Thomas Schmöller

JM3, Vol. 10, Issue 02, 023013, (April 2011) https://doi.org/10.1117/12.10.1117/1.3599858

KEYWORDS: Double patterning technology, Reflectivity, Photomasks, Nanoimprint lithography, Lithography, Semiconducting wafers, Image processing, Photoresist processing, Computer aided design, Logic

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Proceedings Article | 23 March 2011 Paper

Application of an inverse Mack model for negative tone development simulation

Weimin Gao, Ulrich Klostermann, Thomas Mülders, Thomas Schmoeller, Wolfgang Demmerle, Peter De Bisschop, Joost Bekaert

Proceedings Volume 7973, 79732W (2011) https://doi.org/10.1117/12.880949

KEYWORDS: Calibration, Photomasks, Double patterning technology, Lithography, Photoresist processing, Image processing, Source mask optimization, Scanning electron microscopy, Standards development, Metals

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Proceedings Article | 23 March 2011 Paper

Fine calibration of physical resist models: the importance of Jones pupil, laser bandwidth, mask error and CD metrology for accurate modeling at advanced lithographic nodes

Seongho Moon, Seunghune Yang, Artem Shamsuarov, Eunju Kim, Junghoon Ser, Youngchang Kim, Seongwoon Choi, Changjin Kang, Ulrich Klostermann, Bernd Küchler, John Lewellen, Thomas Schmöller, Sooryong Lee

Proceedings Volume 7973, 79730X (2011) https://doi.org/10.1117/12.879592

KEYWORDS: Calibration, Photomasks, Scanning electron microscopy, Cadmium, Metrology, Data modeling, Critical dimension metrology, 3D modeling, Optical proximity correction, Laser metrology

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SPIE Journal Paper | 1 January 2011

Calibration of physical resist models for simulation of extreme ultraviolet lithography

Ulrich Klostermann, Thomas Muelders, Thomas Schmöller, Gian Lorusso, Eric Hendrickx

JM3, Vol. 10, Issue 1, 013007, (January 2011) https://doi.org/10.1117/12.10.1117/1.3533324

KEYWORDS: Calibration, Photomasks, Data modeling, Critical dimension metrology, Extreme ultraviolet lithography, Extreme ultraviolet, 3D modeling, Scanning electron microscopy, Semiconducting wafers, Metrology

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Proceedings Article | 29 September 2010 Paper

Integrated mask and optics simulations for mask corner rounding effect in OPC modeling

Jing Xue, Zhijie Deng, Kyoil Koo, James Shiely, Sooryong Lee, Yunqiang Zhang, Yongfa Fan, Thomas Schmoeller

Proceedings Volume 7823, 782341 (2010) https://doi.org/10.1117/12.866197

KEYWORDS: Photomasks, Optical proximity correction, Critical dimension metrology, Integrated optics, Calibration, Semiconducting wafers, Optical simulations, Process control, Control systems, Scanning electron microscopy

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Proceedings Article | 20 March 2010 Paper

Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

U. Klostermann, T. Mülders, T. Schmöller, G. Lorusso, E. Hendrickx

Proceedings Volume 7636, 763619 (2010) https://doi.org/10.1117/12.846549

KEYWORDS: Calibration, Data modeling, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Scanning electron microscopy, Critical dimension metrology, 3D modeling, Metrology, Semiconducting wafers

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Proceedings Article | 4 March 2010 Paper

The role of mask topography effects in the optimization of pixelated sources

Vitaliy Domnenko, Bernd Küchler, Thomas Mülders, Thomas Schmöller, Hans-Jürgen Stock, Georg Viehöver

Proceedings Volume 7640, 76401X (2010) https://doi.org/10.1117/12.845759

KEYWORDS: Photomasks, Optimization (mathematics), Polarization, Nanoimprint lithography, Lithographic illumination, Diffraction, Lithography, Semiconducting wafers, Tolerancing, Error analysis

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Proceedings Article | 4 March 2010 Paper

Comparative study of resolution limits for double patterning and EUV processes for the 32nm contact hole case

Itaru Kamohara, Keiichi Tajima, Thomas Schmoeller

Proceedings Volume 7640, 76400D (2010) https://doi.org/10.1117/12.846470

KEYWORDS: Double patterning technology, Photomasks, Extreme ultraviolet, Source mask optimization, Extreme ultraviolet lithography, Resolution enhancement technologies, Line width roughness, EUV optics, Image processing, Diffraction

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SPIE Journal Paper | 1 July 2009 Open Access

Impact of mask three-dimensional effects on resist-model calibration

Peter De Bisschop, Thomas Muelders, Ulrich Klostermann, Thomas Schmoeller, John Biafore, Stewart Robertson, Mark Smith

JM3, Vol. 8, Issue 03, 030501, (July 2009) https://doi.org/10.1117/12.10.1117/1.3158356

KEYWORDS: 3D modeling, Critical dimension metrology, Data modeling, Photomasks, Calibration, Cadmium, Optical proximity correction, Lithography, 3D acquisition, SRAF

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SPIE Journal Paper | 1 July 2009

Calibration of physical resist models: methods, usability, and predictive power

Ulrich Klostermann, Thomas Mülders, Denis Ponomarenco, Thomas Schmoeller, Jeroen Van de Kerkhove, Peter De Bisschop

JM3, Vol. 8, Issue 03, 033005, (July 2009) https://doi.org/10.1117/12.10.1117/1.3224949

KEYWORDS: Calibration, 3D modeling, Data modeling, SRAF, Photomasks, Printing, Cadmium sulfide, Lithography, Optical proximity correction, Scanning electron microscopy

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Proceedings Article | 11 May 2009 Paper

The impact of mask design on EUV imaging

Thomas Schmoeller, Jacek Tyminski, John Lewellen, Wolfgang Demmerle

Proceedings Volume 7379, 73792H (2009) https://doi.org/10.1117/12.824331

KEYWORDS: Photomasks, Extreme ultraviolet, Projection systems, Critical dimension metrology, Reflectivity, Extreme ultraviolet lithography, Image processing, Fiber optic illuminators, Imaging systems, Optical proximity correction

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Proceedings Article | 1 April 2009 Paper

Calibration of physical resist models: methods, usability, and predictive power

Ulrich Klostermann, Thomas Mülders, Denis Ponomarenco, Thomas Schmöller, Jeroen Van de Kerkhove, Peter De Bisschop

Proceedings Volume 7273, 727342 (2009) https://doi.org/10.1117/12.814216

KEYWORDS: Calibration, Data modeling, 3D modeling, SRAF, Printing, Cadmium, Lithography, Photomasks, Optical proximity correction, Finite element methods

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Proceedings Article | 18 March 2009 Paper

Analysis of EUVL mask effects under partially coherent illumination

Vitaly Domnenko, Thomas Schmoeller, Thomas Klimpel

Proceedings Volume 7271, 727141 (2009) https://doi.org/10.1117/12.813644

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet lithography, Lithographic illumination, Extreme ultraviolet, Diffraction, Image processing, Lithography, Molybdenum, Silicon

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Proceedings Article | 16 March 2009 Paper

Split, overlap/stitching, and process design for double patterning considering local reflectivity variation by using rigorous 3D wafer-topography/lithography simulation

Itaru Kamohara, Thomas Schmoeller

Proceedings Volume 7274, 72740H (2009) https://doi.org/10.1117/12.813976

KEYWORDS: Double patterning technology, Reflectivity, Photoresist processing, Photomasks, Nanoimprint lithography, Lithography, 3D image processing, Semiconducting wafers, Image processing, Logic

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Proceedings Article | 16 March 2009 Paper

Analysis of topography effects on lithographic performance in double patterning applications

J. Siebert, P. Brooker, T. Schmoeller, T. Klimpel

Proceedings Volume 7274, 72740M (2009) https://doi.org/10.1117/12.814193

KEYWORDS: Photomasks, Semiconducting wafers, Double patterning technology, Lithography, Tin, Etching, Reflectivity, Line edge roughness, Computer simulations, Photoresist processing

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Proceedings Article | 2 May 2008 Paper

Three dimensional mask effects in OPC process model development from first principles simulation

Lawrence Melvin, Thomas Schmoeller, Christian Kalus, Jianliang Li

Proceedings Volume 6792, 679207 (2008) https://doi.org/10.1117/12.798520

KEYWORDS: Photomasks, 3D modeling, Optical proximity correction, Data modeling, Process modeling, SRAF, Data processing, Computer simulations, Electromagnetism, Lithography

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32 nm half-pitch node processes are rapidly approaching production development, but most tools for this process are currently in early development. This development state means that significant data sets are not yet readily available for OPC development. However, several printing effects are thought to become more prominent at the 32 nm half-pitch node. One of the most significant effects is the three dimensional (3D) mask effect where the mask transmittance and phase are impacted by the mask topography. For the 32nm node it is essential that this effect is correctly captured by the OPC model. As wafer data for the 32nm half-pitch is difficult to obtain, the use of rigorous lithography process simulation has proven to be invaluable in studying this effect. Using rigorous simulation, data for OPC model development has been generated that allows the specific study of 3D mask effect calibration. This study began with Kirchhoff based simulations of 32 nm node features which were calibrated into Hopkin's based OPC process models. Once the standard Kirchhoff effects were working in the OPC model, 3D mask effects were included for the same data by performing fully rigorous electromagnetic field (EMF) simulations on the mask. New EMF compensation methodologies were developed to approximate 3D mask effects in a fast OPC process simulation. These methodologies modify the phase and transmission of features to compensate for 3D mask effects in a fast OPC model. The OPC model was then refit including the 3D mask effect and found to generate as much as 5 nm differences between the fit Kirchhoff data and the fit 3D mask data. In addition, the Hopkin's based OPC model with new EMF compensation methodologies has been able to fit the 3D mask data with an RMSE value of 0.52 nm and a range of 2.76 nm. These data were compared to 32 nm half pitch node data from IMEC. In addition the data process models were used for OPC correction with first principles validation to understand the impact of the 3D mask effect on OPC.

Proceedings Article | 20 March 2008 Paper

EUV pattern shift compensation strategies

T. Schmoeller, T. Klimpel, I. Kim, G. Lorusso, A. Myers, R. Jonckheere, A. Goethals, K. Ronse

Proceedings Volume 6921, 69211B (2008) https://doi.org/10.1117/12.772640

KEYWORDS: Photomasks, Extreme ultraviolet, Semiconducting wafers, Projection systems, Imaging systems, Near field, Extreme ultraviolet lithography, Lithography, Reflectivity, Lithographic illumination

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EUV lithography is one of the hot candidates for the 22nm node. A well known phenomenon in EUV lithography is the impact of non-telecentricity and the mask topography on printing performance. Due to oblique illumination of the mask, layout, the printed features are shifted and biased on the wafer with respect to their target dimension up to several nanometers. This effect is inherent to EUV imaging systems. In order to maintain CDU, overlay and registration requirements, these effects need to be compensated for as part of the lithographic manufacturing process. Conventional compensation techniques, such as OPC compensation, significantly increase the complexity of the litho process. In this paper we discuss pattern shift, which is induced by mask-side non-telecentricity of the EUV ring field system. In particular, we show how the mask position relative to the focal plane of the projection system impacts pattern shift. It is shown that mask focus shift allows for a compensation of pattern shift, independent on angle of incidence, pattern type, pattern pitch, pattern orientation, and slit position. Thus it is seen that placement error is not an effect related to mask topography (not a shadowing effect) but arises purely from the mask non-telecentricity. A geometric interpretation of this effect is given and shown to be consistent with results of rigorous simulations. A method to simulate the shift of the mask focus position is briefly discussed. The mask focus shift for which the pattern shift vanishes in the aerial wafer image at best focus is determined using rigorous simulations. The amount of mask focus shift to compensate for the pattern shift is found to be approximately 136nm. This mask focus shift is then applied to investigate the through focus and dose behavior of the pattern shift in the resist. It is shown that the pattern shift is a function of wafer focus position and that this is a result of the image tilt in EUV systems. While the pattern shift is fully compensated at one wafer focus position, the shift at other positions is very small. The impact of the mask focus position on process window is investigated.

Proceedings Article | 1 November 2007 Paper

32nm half pitch node OPC process model development for three dimensional mask effects using rigorous simulation

Lawrence Melvin, Thomas Schmoeller, Jianliang Li

Proceedings Volume 6730, 67304I (2007) https://doi.org/10.1117/12.746229

KEYWORDS: Photomasks, SRAF, Data modeling, 3D modeling, Optical proximity correction, Process modeling, Computer simulations, Data processing, Electromagnetism, Calibration

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Proceedings Article | 1 November 2007 Paper

OPC verification on cell level using fully rigorous mask topography simulation

Vitaly Domnenko, Thomas Klimpel, Georg Viehoever, Hans Koop, Lawrence Melvin, Thomas Schmoeller

Proceedings Volume 6730, 67304J (2007) https://doi.org/10.1117/12.746625

KEYWORDS: Photomasks, Optical proximity correction, Finite-difference time-domain method, Lithography, 3D modeling, Image processing, Polarization, Electromagnetism, 3D acquisition, 3D image processing

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Proceedings Article | 30 October 2007 Paper

Investigation of mask defectivity in full field EUV lithography

Rik Jonckheere, Fumio Iwamoto, G. Lorusso, A. Goethals, K. Ronse, H. Koop, T. Schmoeller

Proceedings Volume 6730, 673012 (2007) https://doi.org/10.1117/12.746566

KEYWORDS: Photomasks, Opacity, Carbon, Particles, Semiconducting wafers, Extreme ultraviolet lithography, Extreme ultraviolet, Reticles, Waveguides, Printing

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Proceedings Article | 12 May 2007 Paper

Impact of mask pellicle effects to OPC quality

Hans Koop, Thomas Schmoeller, Wen-Hao Cheng

Proceedings Volume 6607, 66070N (2007) https://doi.org/10.1117/12.728937

KEYWORDS: Pellicles, Photomasks, Optical proximity correction, Polarization, Apodization, Lithography, Cadmium, Critical dimension metrology, Projection systems, Image quality

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Proceedings Article | 26 March 2007 Paper

Polarization-dependent proximity effects

Jacek Tyminski, Tomoyuki Matsuyama, Toshiharu Nakashima, Thomas Schmoeller, John Lewellen

Proceedings Volume 6520, 65200E (2007) https://doi.org/10.1117/12.711626

KEYWORDS: Scanners, Diffraction, Fiber optic illuminators, Optical lithography, Polarization, Manufacturing, Apodization, Solids, Cadmium sulfide, Image acquisition

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Proceedings Article | 17 December 2003 Paper

Rigorous simulation of defective EUV multilayer masks

Christoph Sambale, Thomas Schmoeller, Andreas Erdmann, Peter Evanschitzky, Christian Kalus

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518049

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Multilayers, Near field, Finite-difference time-domain method, Extreme ultraviolet lithography, 3D modeling, Image segmentation, Lithography

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Proceedings Article | 26 June 2003 Paper

Rigorous simulation of exposure over nonplanar wafers

Andreas Erdmann, Christian Kalus, Thomas Schmoeller, Yewgenija Klyonova, Takashi Sato, Ayako Endo, Tsuyoshi Shibata, Yuuji Kobayashi

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485390

KEYWORDS: Semiconducting wafers, Photomasks, Lithography, Diffraction, Photoresist materials, Computer simulations, Finite-difference time-domain method, Electromagnetism, Silicon, Reflectivity

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Proceedings Article | 16 June 2003 Paper

Efficient simulation of light diffraction from three-dimensional EUV masks using field decomposition techniques

Andreas Erdmann, Christian Kalus, Thomas Schmoeller, Andreas Wolter

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482744

KEYWORDS: Photomasks, Computer simulations, Near field, Extreme ultraviolet, Finite-difference time-domain method, Reflectivity, Diffraction, 3D image processing, 3D modeling, Electromagnetism

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Proceedings Article | 1 August 2002 Paper

Modification of boundaries conditions in the FDTD algorithm for EUV mask modeling

Alexandre Vial, Andreas Erdmann, Thomas Schmoeller, Christian Kalus

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476992

KEYWORDS: Extreme ultraviolet, Photomasks, Finite-difference time-domain method, Reflectivity, Diffraction, Lithography, Algorithm development, Extreme ultraviolet lithography, Matrices, Computer simulations

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Proceedings Article | 30 July 2002 Paper

Accuracy of new analytical models for resist formation lithography

Juriy Malov, Christian Kalus, Henning Muellerke, Thomas Schmoeller, Robert Wildfeuer

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474506

KEYWORDS: 3D modeling, Photoresist processing, Absorption, 3D image processing, Lithography, Process modeling, Optical lithography, Algorithm development, Diffusion, Photoresist materials

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Showing 5 of 37 publications

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